BC557B,112 PNP general purpose transistor in a TO-92-3 through-hole package. Rated for 45V collector-emitter voltage and 100mA collector current.
Mfr Part #:

BC557B,112

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
PNP general purpose transistor in a TO-92-3 through-hole package. Rated for 45V collector-emitter voltage and 100mA collector current.
✓ Total Stock: 3 pcs

BC557B,112 Available from 1 distributor

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BC557B,112 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Spacing
Lead Style
Mounting Type
Noise Figure
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC557B,112 Description

Short technical summary and product information.

The BC557B,112 is a PNP general purpose bipolar junction transistor manufactured by NXP Semiconductors. It is designed for low-current switching and amplification applications.

 

Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 45V, a collector current (IC) rating of 100mA (200mA peak), and a DC current gain (hFE) range of 220 to 475 at 2mA and 5V. The transistor features a transition frequency (ft) of 100MHz and a typical noise figure of 2dB, making it suitable for audio and low-frequency signal processing.

 

The device is housed in a TO-226-3 / TO-92-3 (TO-226AA) formed leads package with through-hole mounting. It has a maximum power dissipation of 500mW and a junction temperature rating of 150°C. The thermal resistance from junction to ambient is 250 K/W.

BC557B,112 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC557
Canonical Name: BC557B PNP General Purpose Transistor
Subcategory: General Purpose Transistor

BC557B,112 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC557B,112 Features

  • PNP general purpose bipolar transistor.
  • 45V collector-emitter breakdown voltage.
  • 100mA continuous collector current rating.
  • 500mW maximum power dissipation.
  • TO-92-3 through-hole package.

BC557B,112 Applications

  • General purpose switching circuits.
  • Audio signal amplification stages.
  • Low-frequency driver and interface circuits.
  • Signal processing in consumer electronics.

BC557B,112 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BC557B,112?

The maximum VCEO is 45V.

What is the package type of the BC557B,112?

The package is TO-226-3, TO-92-3 (TO-226AA) with formed leads, through-hole mounting.

What is the operating junction temperature range?

The maximum junction temperature is 150°C.

Is the BC557B,112 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.

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