| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Noise Figure | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC557B,112 is a PNP general purpose bipolar junction transistor manufactured by NXP Semiconductors. It is designed for low-current switching and amplification applications.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 45V, a collector current (IC) rating of 100mA (200mA peak), and a DC current gain (hFE) range of 220 to 475 at 2mA and 5V. The transistor features a transition frequency (ft) of 100MHz and a typical noise figure of 2dB, making it suitable for audio and low-frequency signal processing.
The device is housed in a TO-226-3 / TO-92-3 (TO-226AA) formed leads package with through-hole mounting. It has a maximum power dissipation of 500mW and a junction temperature rating of 150°C. The thermal resistance from junction to ambient is 250 K/W.
The maximum VCEO is 45V.
The package is TO-226-3, TO-92-3 (TO-226AA) with formed leads, through-hole mounting.
The maximum junction temperature is 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.