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BC557 BC557 is a PNP epitaxial silicon transistor from On Semiconductor with VCEO of -45V, IC of -100mA, and 500mW power dissipation in a TO-92-3 through-hole package.
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BC557

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Mfr Name: On Semiconductor
On Semiconductor
BC557 is a PNP epitaxial silicon transistor from On Semiconductor with VCEO of -45V, IC of -100mA, and 500mW power dissipation in a TO-92-3 through-hole package.
✓ Total Stock: 117 pcs

BC557 Available from 1 distributor

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BC557 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BC557 Description

Short technical summary and product information.

The BC557 is a PNP epitaxial silicon transistor designed for general-purpose switching and amplifier applications. It features a maximum collector-emitter voltage (VCEO) of -45V and a continuous collector current rating of -100mA, with a peak pulse current capability of -200mA. The device offers a DC current gain (hFE) range of 110 to 800 at Vce=-5V and Ic=-2mA, ensuring flexibility in linear amplification circuits.

 

Key electrical characteristics include a typical current gain bandwidth product (fT) of 150MHz, making it suitable for low-frequency amplification. The transistor has a maximum power dissipation of 500mW at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 250°C/W. It is rated for a maximum junction temperature of 150°C and can be stored between -65°C and +150°C.

 

The BC557 is housed in a TO-92-3 through-hole package (TO-226-3, TO-226AA), available with straight or bent lead styles. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. This device is the PNP complement to the NPN BC547 transistor and is part of a family that includes higher voltage (BC556) and lower noise (BC559, BC560) variants.

BC557 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC556/BC557/BC558/BC559/BC560
Canonical Name: BC557 PNP Epitaxial Silicon Transistor
Subcategory: Single Bipolar Junction Transistor

BC557 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC557 Features

  • PNP epitaxial silicon transistor.
  • Maximum VCEO of -45V.
  • Continuous collector current -100mA.
  • DC current gain 110 to 800.
  • TO-92-3 through-hole package.

BC557 Applications

  • General purpose switching circuits.
  • Low frequency amplifier stages.
  • Driver for small loads.
  • Complementary pair with NPN BC547.

BC557 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BC557?

The maximum VCEO is -45V.

What is the maximum collector current rating?

The maximum DC collector current is -100mA, with a peak pulse current of -200mA.

What is the package type of the BC557?

The BC557 is available in a TO-92-3 through-hole package (TO-226-3, TO-226AA).

What is the operating junction temperature range?

The maximum junction temperature is 150°C, and the storage temperature range is -65°C to +150°C.

Is the BC557 RoHS compliant?

Yes, the BC557 is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free as stated in the datasheet.

What is the DC current gain (hFE) range?

The hFE ranges from 110 to 800 at Vce=-5V and Ic=-2mA.

What is the complementary NPN transistor for the BC557?

The complementary NPN transistor is the BC547.

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