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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,354 pcs
|
6354 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Emitter On Voltage (Maximum @ VCE = -5 V, IC = -10 mA) | |
| Base Emitter On Voltage (Minimum/Typical/Maximum @ VCE = -5 V, IC = -2 mA) | |
| Base Emitter Saturation Voltage (Maximum @ IC = -10 mA, IB = -0.5 mA) | |
| Base-Emitter Saturation Voltage (Maximum @ IC = 100 mA, IB = 5 mA) | |
| Collector Cut-Off Current | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Derate above 25°C | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Noise Figure | |
| Operating Temperature | |
| Output Capacitance | |
| Peak Base Current (Pulse) | |
| Peak Collector Current (Pulse) | |
| Power | |
| SVHC Present | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| collector-emitter-saturation-voltage (Maximum @ IC=10 mA, IB=0.5 mA) |
The BC556BTFR is a PNP epitaxial silicon transistor from On Semiconductor, part of the BC556/BC557/BC558/BC559/BC560 family. It is designed for switching and amplifier applications, with a high voltage rating of VCEO = -65 V and collector current capability of -100 mA DC (-200 mA peak). The transistor offers a DC current gain (hFE) range of 110 to 800 at VCE = -5 V, IC = -2 mA, making it suitable for a variety of general-purpose circuits.
Key electrical characteristics include a collector-emitter saturation voltage of -300 mV at IC = -10 mA, IB = -0.5 mA, and a current gain bandwidth product (fT) of 150 MHz typical. The transistor is low-noise with a noise figure of 2 dB typical (10 dB max) at low current. The maximum power dissipation is 500 mW at 25°C ambient, with a derating factor of 4.0 mW/°C above 25°C.
The device is housed in a TO-92-3 package (TO-226-3, TO-226AA) with formed leads for through-hole mounting. The package lead spacing is 2.54 mm. It is available in tape and reel packaging. The transistor is Pb-free, halogen free/BFR free, and RoHS compliant (unverified compliance data). The junction temperature range is -65 to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.40 | $0.40 |
| 10+ | $0.27 | $0.27 |
| 100+ | $0.17 | $0.17 |
| 500+ | $0.11 | $0.11 |
| 1,000+ | $0.10 | $0.10 |
| 2,000+ | $0.08 | $0.08 |
| 4,000+ | $0.07 | $0.07 |
| 10,000+ | $0.06 | $0.06 |
| 24,000+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum VCEO is -65 V.
It comes in a TO-92-3 (TO-226-3, TO-226AA) through-hole package with formed leads.
The junction temperature range is -65 to +150 °C. Storage temperature is the same.
The datasheet states RoHS compliant, but compliance is unverified.
The hFE range is 110 to 800 at VCE = -5 V, IC = -2 mA, depending on grade.
Maximum power dissipation is 500 mW at 25°C ambient, derating at 4.0 mW/°C.
The typical fT is 150 MHz at VCE = -5 V, IC = -10 mA.