| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
146,000 pcs
|
146000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Halogen Free | |
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| Mounting Type | |
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| SVHC Present | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC556BTF is a PNP epitaxial silicon bipolar junction transistor designed for general-purpose switching and amplifier applications. Manufactured by onsemi, this device offers a maximum collector-emitter voltage (VCEO) of -65 V and a continuous collector current rating of -100 mA, with a peak pulse current capability of -200 mA.
Key electrical characteristics include a DC current gain (hFE) range of 110 to 800 at -2 mA collector current, a typical current gain bandwidth product (fT) of 150 MHz, and a maximum collector-emitter saturation voltage of -650 mV at -100 mA. The device is rated for a maximum power dissipation of 500 mW at 25°C ambient temperature and can operate with a junction temperature up to 150°C.
The BC556BTF is housed in a TO-92-3 through-hole package with formed leads, making it suitable for automated insertion and prototyping. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. This transistor is the complement to the NPN BC546 series.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.28 | $0.28 |
| 10+ | $0.17 | $0.17 |
| 100+ | $0.11 | $0.11 |
| 500+ | $0.08 | $0.08 |
| 1,000+ | $0.07 | $0.07 |
| 2,000+ | $0.06 | $0.06 |
| 4,000+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is -65 V.
The BC556BTF is available in a TO-92-3 through-hole package with formed leads.
The maximum junction temperature (TJ) is 150°C.
Yes, the BC556BTF is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free.
The DC current gain (hFE) range is 110 to 800, measured at Ic = -2 mA and Vce = -5 V.
The maximum power dissipation is 500 mW at 25°C ambient temperature.
The typical current gain bandwidth product (fT) is 150 MHz.