BC556BTA BC556BTA is a PNP epitaxial silicon transistor from On Semiconductor. It features 65V collector-emitter breakdown voltage, 100mA collector current, and is housed in a TO-92-3 package.
Mfr Part #:

BC556BTA

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
BC556BTA is a PNP epitaxial silicon transistor from On Semiconductor. It features 65V collector-emitter breakdown voltage, 100mA collector current, and is housed in a TO-92-3 package.
Total Stock: 91,000 pcs
$ Price Range: $0.05 - $0.28

BC556BTA Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
90,000 pcs
90000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request 20+ On Request On Request

BC556BTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum/Maximum @ Vce=-5 V, Ic=-2 mA)
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC556BTA Description

Short technical summary and product information.

The BC556BTA is a PNP epitaxial silicon bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplifier applications. Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of -65 V minimum, a maximum collector current (IC) of -100 mA, and a total device dissipation of 500 mW. The DC current gain (hFE) has a minimum of 200 at Ic = 2 mA, Vce = 5 V, with a full range of 110 to 800. The transistor features a maximum Vce saturation voltage of 650 mV at Ib = 5 mA, Ic = 100 mA, and a typical transition frequency of 150 MHz. The device is offered in a through-hole TO-92-3 package with formed leads, suitable for PCB mounting. It is compliant with RoHS3, lead-free (Pb-Free), and halogen-free/BFR-free standards. The BC556BTA is the complement to the NPN BC546 series.

BC556BTA Quick Information

Product Type: PNP Bipolar Transistor
Series: BC556
Canonical Name: BC556BTA PNP Bipolar Transistor
Subcategory: Single BJT

BC556BTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC556BTA Estimated Pricing

Qty Low High
1+ $0.28 $0.28
10+ $0.17 $0.17
100+ $0.11 $0.11
500+ $0.08 $0.08
1,000+ $0.07 $0.07
2,000+ $0.05 $0.05
4,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC556BTA Features

  • PNP epitaxial silicon bipolar transistor.
  • 65V collector-emitter breakdown voltage.
  • 100mA collector current rating.
  • Through-hole TO-92-3 package.
  • RoHS compliant and lead-free.

BC556BTA Applications

  • Ideal for general-purpose switching circuits.
  • Suitable for amplifier stages.
  • Used in audio frequency circuits.
  • Complementary to NPN BC546 series.
  • Applicable in low-power driver modules.

BC556BTA FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage (VCEO) of BC556BTA?

The minimum VCEO is -65 V.

What is the package type of BC556BTA?

It comes in a TO-92-3 through-hole package with formed leads (TO-226-3, TO-92-3).

What is the maximum operating junction temperature?

The maximum junction temperature (TJ) is 150 °C.

Is BC556BTA RoHS compliant?

Yes, it is RoHS3 compliant, lead-free (Pb-Free), and halogen-free/BFR-free as per the datasheet.

What is the DC current gain (hFE) of BC556BTA?

The minimum hFE is 200 at Ic=2mA, Vce=5V; the full range is 110 to 800 across the series.

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