BC556ABU PNP epitaxial silicon transistor with VCEO of -65V, IC of -100mA, and hFE of 110 at 2mA. Packaged in through-hole TO-92-3.
Mfr Part #:

BC556ABU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP epitaxial silicon transistor with VCEO of -65V, IC of -100mA, and hFE of 110 at 2mA. Packaged in through-hole TO-92-3.
Total Stock: 148,196 pcs
$ Price Range: $0.09 - $0.40

BC556ABU Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
148,185 pcs
148185 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
11 pcs
11 pcs On Request 1 On Request On Request On Request On Request On Request

BC556ABU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter On Voltage (VBE(ON))
Base-Emitter Saturation Voltage (Vbe Sat)
Collector Cut-off Current (ICBO)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Junction Temperature
Lead Spacing
Lead Style
Mounting Type
Noise Figure (Typical/Maximum @ VCE = -5 V, IC = -200 µA, f = 1 kHz, RG = 2 kΩ)
Operating Temperature
Output Capacitance (Cob)
Peak Base Current (Pulse)
Peak Collector Current (Pulse)
Power
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Termination Style
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
collector-emitter-saturation-voltage (Maximum @ IC=10 mA, IB=0.5 mA)

BC556ABU Description

Short technical summary and product information.

The BC556ABU is a PNP epitaxial silicon bipolar junction transistor from onsemi's general-purpose BC556 family. It is designed for switching and amplifier applications, offering a maximum collector-emitter voltage of -65 V and a continuous collector current of -100 mA. The transistor features a DC current gain (hFE) of 110 minimum at IC = -2 mA and VCE = -5 V, and a typical current gain bandwidth product of 150 MHz.

 

This device is housed in a standard through-hole TO-92-3 package (also known as TO-226-3) with a lead spacing of 2.54 mm. It supports a maximum power dissipation of 500 mW and a junction temperature up to 150 °C. The BC556ABU is Pb-Free, Halogen Free/BFR Free, and RoHS compliant per the manufacturer's datasheet.

 

As the high-voltage variant of the BC556 family, this transistor is suitable for driving moderate loads and signal amplification in consumer, industrial, and audio electronics. Its complementary NPN counterparts include the BC546, BC547, BC548, BC549, and BC550, enabling push-pull stage designs.

BC556ABU Quick Information

Product Type: PNP Bipolar Junction Transistor (BJT)
Series: BC556
Canonical Name: BC556ABU PNP Epitaxial Silicon Transistor
Subcategory: General Purpose PNP Transistor

BC556ABU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC556ABU Estimated Pricing

Qty Low High
1+ $0.40 $0.40
10+ $0.23 $0.23
100+ $0.14 $0.14
500+ $0.10 $0.10
1,000+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC556ABU Features

  • General purpose PNP bipolar junction transistor.
  • High collector-emitter voltage rating of 65V.
  • Continuous collector current of 100 mA.
  • Current gain bandwidth product of 150 MHz.
  • Through-hole TO-92-3 package for easy mounting.

BC556ABU Applications

  • Suitable for general purpose switching circuits.
  • Used in audio frequency amplifier stages.
  • Employed in signal processing and control systems.
  • Ideal for driver stages in low-power designs.
  • Works in complementary push-pull configurations.

BC556ABU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transistor type of BC556ABU?

The BC556ABU is a PNP bipolar junction transistor.

What is the maximum collector-emitter voltage (VCEO) of BC556ABU?

The maximum VCEO is -65 V (65 V for PNP polarity).

What is the maximum collector current (IC) of BC556ABU?

The maximum DC collector current is -100 mA (100 mA for PNP polarity).

What is the DC current gain (hFE) of BC556ABU?

The minimum hFE is 110 at IC = -2 mA and VCE = -5 V.

What is the gain bandwidth product (fT) of BC556ABU?

The typical fT is 150 MHz at VCE = -5 V and IC = -10 mA.

What is the package type of BC556ABU?

It is available in a through-hole TO-92-3 package (TO-226-3, three leads).

Is BC556ABU RoHS compliant?

Yes, according to the datasheet the device is Pb-Free, Halogen Free/BFR Free and RoHS Compliant.

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