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1,890 pcs
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1890 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor BC556ATA is a PNP bipolar junction transistor (BJT) suitable for various electronic circuits. It operates with a maximum collector-emitter voltage (VCEO) of -65V and a collector-base voltage (VCBO) of -80V. The device can handle a maximum continuous collector current (IC) of 100mA and a maximum DC collector current of 0.1A. Its saturation voltage (VCE(sat)) is a maximum of -250mV. The transistor exhibits a typical gain-bandwidth product (fT) of 150MHz and a DC current gain (hFE) ranging from a minimum of 110 to a maximum of 800. The maximum power dissipation (Pd) is rated at 500mW (0.5W).
This component is designed for through-hole mounting and comes in a TO-92-3 package, often supplied in an ammo pack. It operates within a wide temperature range, from a minimum of -65°C to a maximum of +150°C. The BC556ATA is specified with RoHS3 compliance, Moisture Sensitivity Level (MSL) 1, and REACH unaffected status, though these compliance details have low confidence without official verification.
Key electrical characteristics include its PNP polarity, single configuration, and specific voltage and current ratings suitable for amplification and switching tasks in electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is -65 V.
The maximum continuous collector current is 100 mA.
The maximum power dissipation is 500 mW.
The operating temperature range is -65 °C to +150 °C.
The BC556 is available in a TO-92-3 through-hole package.
The DC current gain (hFE) ranges from 110 to 800.
The gain bandwidth product (fT) is 150 MHz.