| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
158,165 pcs
|
158165 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The BC550CTA is an NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. It is designed for general-purpose amplification and switching applications in through-hole electronic circuits. The device is supplied in a TO-226-3 / TO-92-3 (TO-226AA) package with formed leads, making it suitable for standard PCB insertion.
Electrically, the transistor features a maximum collector-emitter voltage (Vceo) of 45V and a maximum collector current (Ic) of 100mA. It is rated for 500mW power dissipation. The minimum DC current gain (hFE) is 420 when measured at Ic=2mA and Vce=5V, providing reliable gain for small-signal stages. The collector-emitter saturation voltage is 600mV maximum at Ib=5mA and Ic=100mA, supporting efficient low-voltage switching. With a typical transition frequency of 300MHz, it can be used in low-frequency to high-frequency signal applications.
The BC550CTA is listed as RoHS compliant, and its maximum operating junction temperature is 150°C. As a through-hole transistor, it is commonly used in breadboards, prototyping, and long-life products where serviceability is important.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.28 | $0.28 |
| 10+ | $0.17 | $0.17 |
| 100+ | $0.11 | $0.11 |
| 500+ | $0.08 | $0.08 |
| 1,000+ | $0.07 | $0.07 |
| 2,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
45V.
100mA.
500mW.
TO-226-3 / TO-92-3 (TO-226AA) with formed leads; supplier device package is TO-92-3.
150°C.
The part is listed as RoHS3 compliant in the database.
420 minimum, tested at Ic=2mA and Vce=5V.