| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
240,000 pcs
|
240000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC550CBU is a general-purpose NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for low-power amplification and switching applications.
Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 45V, a continuous collector current (Ic) rating of 100mA, and a power dissipation (Pd) of 500mW. The device offers a DC current gain (hFE) of 420 minimum at 2mA collector current and 5V Vce, and a transition frequency (ft) of 300MHz. The maximum collector-emitter saturation voltage (Vce(sat)) is 600mV at 100mA base current.
The transistor is housed in a through-hole TO-92-3 package (TO-226-3, TO-92-3 (TO-226AA)), suitable for manual assembly and prototyping. The maximum junction temperature is 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.29 | $0.29 |
| 10+ | $0.18 | $0.18 |
| 100+ | $0.11 | $0.11 |
| 500+ | $0.08 | $0.08 |
| 1,000+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) is 45V.
The maximum continuous collector current (Ic) is 100mA.
The power dissipation (Pd) is 500mW.
The BC550CBU is available in a through-hole TO-92-3 package (TO-226-3, TO-92-3 (TO-226AA)).
The maximum junction temperature (TJ) is 150°C.
The BC550CBU is listed as RoHS3 Compliant, though this is unverified.