| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,535 pcs
|
1535 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC549B is an NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for general-purpose amplification and switching applications. It features a collector-emitter breakdown voltage of 30V and a maximum collector current of 100mA, making it suitable for low-power circuits.
With a power dissipation of 500mW and a transition frequency of 300MHz, the BC549B supports moderate-speed switching and amplification. The DC current gain (hFE) is minimum 200 at 2mA, 5V, and the collector-emitter saturation voltage is 600mV at 100mA, 5mA base current.
The transistor is available in a TO-92-3 through-hole package, which is suitable for breadboarding and PCB prototyping. The operating junction temperature is up to 150°C, providing a good thermal margin for typical applications.
This NPN transistor is commonly used in low-power amplification, signal processing, and switching circuits where its voltage and current ratings are sufficient.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.13 | $0.13 |
| 10+ | $0.08 | $0.08 |
| 100+ | $0.06 | $0.06 |
| 500+ | $0.04 | $0.04 |
| 1,000+ | $0.03 | $0.03 |
| 4,000+ | $0.03 | $0.03 |
| 8,000+ | $0.02 | $0.02 |
| 24,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) is 30V.
The maximum collector current (Ic) is 100mA.
The maximum power dissipation is 500mW.
The BC549B is available in a TO-92-3 through-hole package (TO-226-3, TO-92-3 (TO-226AA)).
The maximum junction temperature is 150°C.
The minimum DC current gain (hFE) is 200 at collector current 2mA and collector-emitter voltage 5V.
The transition frequency (ft) is 300MHz.