| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Mounting Type | |
| Noise Figure |
The BC549B from SM TECH is an NPN silicon bipolar junction transistor (BJT) suitable for various electronic applications. It is characterized by its low noise characteristics, making it useful in signal amplification circuits.
Key electrical specifications include a collector-emitter breakdown voltage of 30 Vdc and a collector current of up to 100 mAdc. The DC current gain (hFE) ranges from 200 to 450 at 2.0 mAdc collector current and 5.0 Vdc collector-emitter voltage. The current-gain bandwidth product (fT) is typically 250 MHz at 10 mAdc collector current and 5.0 Vdc collector-emitter voltage.
This transistor is housed in a TO-92 package, designed for through-hole mounting. The operating and storage junction temperature range is from -55°C to +150°C. Thermal characteristics include a junction-to-ambient thermal resistance of 200 °C/W and a junction-to-case thermal resistance of 83.3 °C/W.
Environmental compliance includes RoHS3 compliance, an MSL of 1, and REACH unaffected status, though these are marked with low confidence.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 30 Vdc.
The continuous collector current is 100 mAdc.
The typical DC current gain (hFE) is 200 to 450.
The typical current-gain bandwidth product (fT) is 250 MHz.
The BC549B is supplied in a TO-92 package.
The operating and storage junction temperature range is -55°C to +150°C.
The typical noise figure NF1 is 0.6 dB.