BC548B BC548B is an NPN silicon amplifier transistor from onsemi. It features 30V maximum collector-emitter voltage, 100mA continuous collector current, 625mW power dissipation, and a minimum DC current gain of 200.
Mfr Part #:

BC548B

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BC548B is an NPN silicon amplifier transistor from onsemi. It features 30V maximum collector-emitter voltage, 100mA continuous collector current, 625mW power dissipation, and a minimum DC current gain of 200.
Total Stock: 1,885 pcs
$ Price Range: $0.02 - $0.13

BC548B Available from 1 distributor

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Non-Authorised
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1,885 pcs
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BC548B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current (ICES)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Industrial Grade
Lead Style
Mounting Type
Operating Temperature
PD (Maximum @ Tc=25 °C)
Power
Storage Temperature
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC548B Description

Short technical summary and product information.

The BC548B is an NPN silicon epitaxial planar transistor designed for general-purpose amplifier and switching applications. It is part of the BC546/547/548 series, offering a collector-emitter voltage rating of 30V and a continuous collector current of 100mA. With a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage, the BC548B provides consistent amplification performance.

 

The transistor has a transition frequency of 300MHz, making it suitable for low-frequency signal amplification. The collector-emitter saturation voltage is typically 250mV at 10mA collector current and 0.5mA base current. Maximum power dissipation is 625mW at 25°C ambient temperature, derated at 5mW/°C above 25°C. The operating junction temperature range is -55°C to 150°C.

 

The BC548B is housed in a TO-92 through-hole package (TO-226-3, TO-92-3 Long Body), which is suitable for breadboarding and prototyping. The part is RoHS3 compliant (unverified) with MSL Level 1.

BC548B Quick Information

Product Type: Bipolar Junction Transistor
Series: B
Canonical Name: NPN Silicon Amplifier Transistor BC548B
Subcategory: Single NPN

BC548B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC548B Estimated Pricing

Qty Low High
1+ $0.13 $0.13
10+ $0.08 $0.08
100+ $0.06 $0.06
500+ $0.04 $0.04
1,000+ $0.03 $0.03
4,000+ $0.03 $0.03
8,000+ $0.02 $0.02
24,000+ $0.02 $0.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC548B Features

  • NPN silicon epitaxial planar transistor.
  • Maximum collector-emitter voltage 30V.
  • Continuous collector current 100mA.
  • Minimum DC current gain hFE 200.
  • Through-hole TO-92 package.

BC548B Applications

  • General-purpose amplifier circuits.
  • Low-frequency signal amplification.
  • Small-signal switching applications.
  • Audio preamplifier stages.

BC548B FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of BC548B?

30V.

What is the maximum collector current of BC548B?

100mA.

What is the package type of BC548B?

TO-92 (TO-226-3, TO-92-3 Long Body) through-hole.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the BC548B RoHS compliant?

It is marked as RoHS3 Compliant but unverified from source documents.

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