| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Style | |
| Number of Channels | |
| Operating Temperature | |
| SVHC Present | |
| Technology |
The BC547C is an N-Channel enhancement mode field-effect transistor manufactured by CBC using high cell density DMOS technology. This design minimizes on-state resistance while providing rugged, reliable, and fast switching performance. It is suitable for most applications requiring up to 500mA DC and is particularly well-suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Key electrical specifications include a drain-source breakdown voltage (Vds) of 60V, a continuous drain current (Id) of 500mA, and a drain-source on-resistance (Rds On) of 1.2 Ohms. The gate-source voltage (Vgs) range is ±20V, with a gate-source threshold voltage (Vgs th) of 3V. The transistor operates within a temperature range of -55°C to +150°C and has a power dissipation (Pd) of 830mW.
This component is packaged in a TO-92-3 through-hole package and is supplied in bulk. Its high density cell design contributes to its low Rds(on) and high saturation current capability, making it a voltage-controlled small signal switch that is both rugged and reliable.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60 V.
The continuous drain current is 500 mA.
The drain-source on-resistance is 1.2 Ohms.
The gate-source voltage range is ±20 V.
The gate-source threshold voltage is 3 V.
The operating temperature range is -55℃ to +150℃.
The power dissipation is 830 mW.