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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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179 pcs
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179 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Maximum) @ Ic=2mA, Vce=5V | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Typical) @ Ic=2mA, Vce=5V | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC547B,116 is an NPN general-purpose bipolar junction transistor manufactured by NXP Semiconductors. It features a maximum collector-emitter voltage (VCEO) of 45V and a continuous collector current (IC) of 100mA, making it suitable for low-current switching and amplification applications.
The transistor offers a DC current gain (hFE) range of 200 to 450 at 2mA collector current and 5V collector-emitter voltage, with a typical gain of 290. Maximum power dissipation is 500mW, and the transition frequency (ft) is 100MHz. The collector-emitter saturation voltage is 400mV maximum at 100mA.
Packaged in a TO-92-3 through-hole package (TO-226-3, TO-92-3 formed leads), the BC547B,116 is designed for easy insertion on printed circuit boards. The operating junction temperature range extends up to 150°C. Typical applications include general-purpose switching and amplification in consumer and industrial electronics.
The maximum collector-emitter voltage is 45V.
It is available in a TO-92-3 through-hole package (TO-226-3, TO-92-3 formed leads).
The maximum operating junction temperature is 150°C.
The component is listed as RoHS3 compliant, but this data is unverified and should be treated as low confidence.
The DC current gain ranges from 200 minimum to 450 maximum at 2mA collector current and 5V collector-emitter voltage, with a typical value of 290.
The maximum power dissipation is 500mW.
The typical transition frequency is 100MHz.