| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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26,360 pcs
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26360 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
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BC546BG is an NPN silicon bipolar junction transistor from On Semiconductor, intended for small-signal amplification and low-power switching. Maximum ratings include a collector-emitter voltage of 65V, collector-base voltage of 80V, emitter-base voltage of 6V, and a continuous collector current of 100mA. Power dissipation is rated at 625mW at 25°C ambient and 1.5W at 25°C case temperature.
At a test condition of 2mA collector current and 5V collector-emitter voltage, the DC current gain is 200 minimum, 290 typical, and 450 maximum. The transistor has a transition frequency of 300MHz and features a maximum collector-emitter saturation voltage of 0.6V at 100mA. These characteristics support linear amplifier and high-frequency small-signal applications.
The device is available in a through-hole TO-92 (TO-226) package with straight lead, bent lead, and tape-and-reel options. It operates over a junction temperature range of -55°C to +150°C. The Pb-free package is available as noted in the datasheet.
The maximum collector-emitter voltage (VCEO) is 65V for the BC546 variant.
The BC546BG is available in a through-hole TO-92 (TO-226) package with straight lead, bent lead, or tape-and-reel options.
The operating junction temperature range is -55°C to +150°C.
The part is listed as RoHS3 compliant and Pb-free packages are available, but the compliance status is unverified in the source data and should be confirmed with the manufacturer.
The maximum continuous collector current is 100mA.
At 2mA collector current and 5V collector-emitter voltage, hFE ranges from 200 minimum to 450 maximum, with a typical value of 290.
The transition frequency is 300MHz.