| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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216 pcs
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216 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
| Transistor Type |
The NXP Semiconductors BC546B is a single NPN bipolar junction transistor (BJT) housed in a TO-92-3 package. It is designed for through-hole mounting.
This transistor features a collector-emitter breakdown voltage of 65V and can handle a maximum collector current of 100mA. Its maximum power dissipation is rated at 500mW, with a transition frequency of 100MHz. The Vce saturation is specified at 400mV at 5mA base current and 100mA collector current. The minimum DC current gain (hFE) is 200 at 2mA collector current and 5V Vce.
The operating temperature range for the BC546B is up to 150°C (TJ). It is suitable for various electronic circuits requiring a general-purpose NPN transistor.
Key electrical characteristics include a low collector cutoff current of 15nA (ICBO). The component is specified with RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted as unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the BC546B is 100 mA.
The collector-emitter breakdown voltage (Vceo) for the BC546B is 65 V.
The maximum power dissipation for the BC546B is 500 mW.
The operating temperature range for the BC546B is up to 150°C (TJ).
The BC546B is available in a TO-92-3 package and is designed for through-hole mounting.