Have a small number of parts or want to add parts manually? Request Quote manually

Search across all market segments

BC546ABU On Semiconductor BC546ABU NPN bipolar transistor rated for 65V collector-emitter breakdown, 100mA collector current, and 500mW power dissipation in a TO-92-3 through-hole package.
Mfr Part #:

BC546ABU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
On Semiconductor BC546ABU NPN bipolar transistor rated for 65V collector-emitter breakdown, 100mA collector current, and 500mW power dissipation in a TO-92-3 through-hole package.
Total Stock: 111,598 pcs
$ Price Range: $0.06 - $0.26

BC546ABU Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
90,578 pcs
90578 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
21,020 pcs
21020 pcs On Request 1 On Request On Request On Request On Request On Request

BC546ABU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC546ABU Description

Short technical summary and product information.

The BC546ABU is an NPN bipolar junction transistor from On Semiconductor, designed for general-purpose switching and amplification applications. It features a maximum collector-emitter breakdown voltage of 65V, a continuous collector current rating of 100mA, and a power dissipation of 500mW. The device offers a minimum DC current gain (hFE) of 110 at Ic=2mA and Vce=5V, with a typical transition frequency of 300MHz.

 

This transistor is housed in a TO-92-3 (TO-226-3) through-hole package, suitable for manual assembly and prototyping. The operating junction temperature can reach up to 150°C, ensuring reliable performance under moderate thermal loads. Saturation voltage is typically 600mV at Ib=5mA and Ic=100mA.

 

Commonly used in low-power signal amplification, driver stages, and switching circuits, the BC546ABU is a cost-effective choice for educational projects, consumer electronics, and industrial control systems. The part is marked as RoHS3 and REACH compliant, though these compliance claims are unverified in the available data.

BC546ABU Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: On Semiconductor BC546ABU NPN Bipolar Transistor
Subcategory: NPN Single

BC546ABU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC546ABU Estimated Pricing

Qty Low High
1+ $0.26 $0.26
10+ $0.16 $0.16
100+ $0.10 $0.10
500+ $0.07 $0.07
1,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC546ABU Features

  • NPN bipolar junction transistor design.
  • 65V collector-emitter breakdown voltage.
  • 100mA continuous collector current rating.
  • 500mW maximum power dissipation capability.
  • 300MHz typical transition frequency.

BC546ABU Applications

  • Used in general purpose signal amplification.
  • Suitable for low-power switching circuits.
  • Ideal for driver stages in audio circuits.
  • Used in educational electronics projects.
  • Works in industrial control logic circuits.

BC546ABU FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BC546ABU?

The maximum collector-emitter breakdown voltage (Vceo) is 65V.

What is the maximum collector current rating?

The maximum continuous collector current (Ic) is 100mA.

What package does the BC546ABU come in?

The device is supplied in a TO-92-3 (TO-226-3) through-hole package.

What is the operating junction temperature range?

The maximum junction temperature is 150°C.

Is the BC546ABU RoHS compliant?

The part is listed as RoHS3 compliant, but this is unverified.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 110 at Ic=2mA, Vce=5V.

Home
Categories
Submit RFQ
Login
Account

Categories