| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,578 pcs
|
90578 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
21,020 pcs
|
21020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC546ABU is an NPN bipolar junction transistor from On Semiconductor, designed for general-purpose switching and amplification applications. It features a maximum collector-emitter breakdown voltage of 65V, a continuous collector current rating of 100mA, and a power dissipation of 500mW. The device offers a minimum DC current gain (hFE) of 110 at Ic=2mA and Vce=5V, with a typical transition frequency of 300MHz.
This transistor is housed in a TO-92-3 (TO-226-3) through-hole package, suitable for manual assembly and prototyping. The operating junction temperature can reach up to 150°C, ensuring reliable performance under moderate thermal loads. Saturation voltage is typically 600mV at Ib=5mA and Ic=100mA.
Commonly used in low-power signal amplification, driver stages, and switching circuits, the BC546ABU is a cost-effective choice for educational projects, consumer electronics, and industrial control systems. The part is marked as RoHS3 and REACH compliant, though these compliance claims are unverified in the available data.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.26 | $0.26 |
| 10+ | $0.16 | $0.16 |
| 100+ | $0.10 | $0.10 |
| 500+ | $0.07 | $0.07 |
| 1,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (Vceo) is 65V.
The maximum continuous collector current (Ic) is 100mA.
The device is supplied in a TO-92-3 (TO-226-3) through-hole package.
The maximum junction temperature is 150°C.
The part is listed as RoHS3 compliant, but this is unverified.
The minimum DC current gain (hFE) is 110 at Ic=2mA, Vce=5V.