| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
BC546A is an NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. It offers a 65V collector-emitter breakdown voltage and 100mA collector current rating, making it suitable for low-power amplification and switching circuits.
The device has a minimum DC current gain (hFE) of 110 at IC=2mA and VCE=5V, and a collector-emitter saturation voltage of 600mV at IC=100mA. Its 300MHz transition frequency enables high-frequency small-signal amplification and fast switching.
The BC546A is supplied in a through-hole TO-92-3 package (TO-226AA), which is suitable for conventional PCB assembly. Power dissipation is rated at 500mW, and maximum junction temperature is 150°C.
With 65V breakdown voltage, 100mA current capability, and 300MHz fT, this transistor fits general-purpose signal processing, driver stages, and low-power switching applications in through-hole designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.16 | $0.16 |
| 10+ | $0.10 | $0.10 |
| 100+ | $0.07 | $0.07 |
| 500+ | $0.05 | $0.05 |
| 1,000+ | $0.04 | $0.04 |
| 4,000+ | $0.04 | $0.04 |
| 8,000+ | $0.03 | $0.03 |
| 24,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
65 V.
100 mA.
Through-hole TO-92-3 (TO-226AA) package.
150°C.
The sourced data indicates RoHS3 compliant, but this is unverified and low confidence.
110 at Ic=2mA, Vce=5V.
300 MHz.