LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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75 pcs
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75 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC338-25 from NXP Semiconductors is an NPN silicon bipolar junction transistor (BJT) housed in a TO-92 package. This transistor is suitable for a variety of amplification and switching applications.
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of up to 45 Vdc and a continuous collector current (IC) of 800 mAdc. The device offers a typical DC current gain (hFE) ranging from 100 to 630 depending on the specific grade and operating conditions. Its typical output capacitance (Cob) is 15 pF, and the current-gain bandwidth product (fT) is 210 MHz.
The operating and storage junction temperature range is from -55°C to +150°C. Thermal resistance from junction to ambient (RJA) is 200 °C/W, and junction to case (RJC) is 83.3 °C/W.
This transistor is designed for through-hole mounting.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BC338-25 is 45 Vdc.
The continuous collector current (IC) rating for the BC338-25 is 800 mAdc.
The typical DC current gain (hFE) for the BC338-25 varies by grade, with values ranging from 100 to 630 under specified conditions.
The operating and storage junction temperature range for the BC338-25 is -55°C to +150°C.
The BC338-25 is supplied in a TO-92 package.
