| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
227,636 pcs
|
227636 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC33725TAR is an NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. Designed for general-purpose amplification and switching applications, it combines a 45 V collector-emitter breakdown voltage with a collector current rating of 800 mA. The device supports a power dissipation of 625 mW and a transition frequency of 100 MHz, making it suitable for moderate-speed low-power circuits.
Electrical characteristics include a minimum DC current gain (hFE) of 160 at Ic=100 mA and Vce=1 V, and a maximum collector-emitter saturation voltage of 700 mV at Ib=50 mA and Ic=500 mA. These parameters allow the transistor to operate efficiently in saturated switching stages as well as in linear amplifier stages where consistent gain is important.
The transistor is housed in a TO-226-3 / TO-92-3 (TO-226AA) package with formed leads, and the supplier device package is TO-92-3. This through-hole package is well suited for manual assembly, breadboarding, and low-cost PCB designs. The junction temperature rating is 150°C, allowing operation in ambient environments with adequate thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.33 | $0.33 |
| 10+ | $0.20 | $0.20 |
| 100+ | $0.13 | $0.13 |
| 500+ | $0.09 | $0.09 |
| 1,000+ | $0.08 | $0.08 |
| 2,000+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 45 V.
The collector current rating is 800 mA.
The package is TO-226-3 / TO-92-3 (TO-226AA) with formed leads; the supplier device package is TO-92-3.
The maximum junction temperature is 150°C.
The part is listed as RoHS3 Compliant, but this status is unverified and not confirmed from an official source.
The minimum DC current gain (hFE) is 160 at Ic=100 mA and Vce=1 V.
The maximum Vce saturation voltage is 700 mV at Ib=50 mA and Ic=500 mA.