BC33725TA BC33725TA is an NPN bipolar junction transistor from On Semiconductor. It features a collector-emitter voltage of 45V, collector current of 800mA, and power dissipation of 625mW.
Mfr Part #:

BC33725TA

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
BC33725TA is an NPN bipolar junction transistor from On Semiconductor. It features a collector-emitter voltage of 45V, collector current of 800mA, and power dissipation of 625mW.
✓ Total Stock: 26,370 pcs
$ Price Range: $0.07 - $0.33

BC33725TA Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
25,020 pcs
25020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,138 pcs
1138 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
212 pcs
212 pcs On Request 1 On Request On Request On Request On Request On Request

BC33725TA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC33725TA Description

Short technical summary and product information.

The BC33725TA is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications.

 

Key electrical specifications include a collector-emitter voltage (Vceo) of 45V, a collector current (Ic) of 800mA, and a power dissipation of 625mW. The transistor offers a DC current gain (hFE) of 160 minimum at 100mA collector current and 1V Vce. Its transition frequency (ft) is 100MHz, making it suitable for low to medium frequency circuits. The maximum Vce saturation voltage is 700mV at 50mA base current and 500mA collector current.

 

The device is housed in a TO-92-3 through-hole package (TO-226-3, TO-92-3 (TO-226AA) with formed leads). It can operate at a junction temperature up to 150°C.

BC33725TA Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BC33725TA NPN Bipolar Junction Transistor
Subcategory: NPN

BC33725TA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC33725TA Estimated Pricing

Qty Low High
1+ $0.33 $0.33
10+ $0.20 $0.20
100+ $0.13 $0.13
500+ $0.09 $0.09
1,000+ $0.08 $0.08
2,000+ $0.07 $0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC33725TA Features

  • NPN bipolar junction transistor design.
  • 45V collector-emitter voltage rating.
  • 800mA continuous collector current capability.
  • 625mW power dissipation capacity.
  • Through-hole TO-92-3 package with formed leads.

BC33725TA Applications

  • General purpose switching and amplification circuits.
  • Low to medium frequency signal processing.
  • Driver stages in audio and control systems.
  • Interface between logic and higher power loads.

BC33725TA FAQs

5 frequently asked questions generated from this part’s specifications.
What is the package type of the BC33725TA?

The BC33725TA is available in a TO-226-3, TO-92-3 (TO-226AA) package with formed leads, also referred to as TO-92-3.

What is the maximum operating temperature for the BC33725TA?

The maximum operating junction temperature is 150°C.

Is the BC33725TA RoHS compliant?

The BC33725TA is listed as RoHS3 compliant, but this information is unverified.

What is the DC current gain (hFE) of the BC33725TA?

The minimum DC current gain (hFE) is 160 at a collector current of 100mA and a collector-emitter voltage of 1V.

What is the collector-emitter voltage rating of the BC33725TA?

The collector-emitter voltage (Vceo) is 45V.

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