BC33725BU NPN transistor with 45V Vce max, 800mA Ic max, and 625mW power dissipation. Packaged in through-hole TO-92-3.
Mfr Part #:

BC33725BU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN transistor with 45V Vce max, 800mA Ic max, and 625mW power dissipation. Packaged in through-hole TO-92-3.
Total Stock: 16,005 pcs
$ Price Range: $0.07 - $0.30

BC33725BU Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
16,000 pcs
16000 pcs On Request 1 On Request On Request 1451+ On Request On Request
Non-Authorised Inventory information
5 pcs
5 pcs On Request 1 On Request On Request On Request On Request On Request

BC33725BU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC33725BU Description

Short technical summary and product information.

The BC33725BU is an NPN silicon bipolar junction transistor manufactured by On Semiconductor. It is designed for general purpose amplification and switching applications.

 

Key electrical ratings include a maximum collector-emitter voltage of 45 V, a maximum collector current of 800 mA, and a power dissipation of 625 mW. The transistor offers a DC current gain (hFE) of at least 160 at 100 mA collector current and 1 V Vce. The maximum collector-emitter saturation voltage is 700 mV at 500 mA collector current and 50 mA base current. With a transition frequency of 100 MHz, it is suitable for low to moderate frequency circuits.

 

The device is housed in a through-hole TO-92-3 package, also known as TO-226-3 (TO-226AA). The maximum junction temperature is 150°C. Mounting is through-hole, compatible with standard TO-92 footprints.

BC33725BU Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: NPN Bipolar Junction Transistor, 45V Vce, 800mA Ic, TO-92-3
Subcategory: Bipolar Junction Transistor (BJT) - Single

BC33725BU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC33725BU Estimated Pricing

Qty Low High
1+ $0.30 $0.30
10+ $0.19 $0.19
100+ $0.12 $0.12
500+ $0.09 $0.09
1,000+ $0.07 $0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC33725BU Features

  • NPN silicon bipolar junction transistor.
  • Maximum 45V collector-emitter voltage.
  • 800mA continuous collector current rating.
  • 100 MHz transition frequency.
  • Through-hole TO-92-3 package.

BC33725BU Applications

  • General purpose amplification and switching.
  • Suitable for low-power driver stages.
  • Ideal for signal processing circuits.

BC33725BU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

45 V

What is the package type?

TO-92-3 (through hole)

What is the maximum junction temperature?

150°C

Is this component RoHS compliant?

Yes, RoHS3 compliant (unverified)

What is the DC current gain (hFE)?

Minimum 160 at Ic=100mA, Vce=1V

What is the maximum Vce saturation voltage?

700 mV at Ib=50mA, Ic=500mA

What is the transition frequency?

100 MHz

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