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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,000 pcs
|
16000 pcs | On Request | 1 | On Request | On Request | 1451+ | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC33725BU is an NPN silicon bipolar junction transistor manufactured by On Semiconductor. It is designed for general purpose amplification and switching applications.
Key electrical ratings include a maximum collector-emitter voltage of 45 V, a maximum collector current of 800 mA, and a power dissipation of 625 mW. The transistor offers a DC current gain (hFE) of at least 160 at 100 mA collector current and 1 V Vce. The maximum collector-emitter saturation voltage is 700 mV at 500 mA collector current and 50 mA base current. With a transition frequency of 100 MHz, it is suitable for low to moderate frequency circuits.
The device is housed in a through-hole TO-92-3 package, also known as TO-226-3 (TO-226AA). The maximum junction temperature is 150°C. Mounting is through-hole, compatible with standard TO-92 footprints.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.30 | $0.30 |
| 10+ | $0.19 | $0.19 |
| 100+ | $0.12 | $0.12 |
| 500+ | $0.09 | $0.09 |
| 1,000+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
45 V
TO-92-3 (through hole)
150°C
Yes, RoHS3 compliant (unverified)
Minimum 160 at Ic=100mA, Vce=1V
700 mV at Ib=50mA, Ic=500mA
100 MHz