| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
51,985 pcs
|
51985 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC33716TFR is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 45V, a continuous collector current (Ic) rating of 800mA, and a power dissipation (Pd) of 625mW. The device offers a minimum DC current gain (hFE) of 100 at 100mA collector current and 1V Vce, with a maximum collector-emitter saturation voltage of 700mV at a base current of 50mA and collector current of 500mA. The transition frequency (ft) is 100MHz.
The transistor is housed in a TO-226-3 / TO-92-3 (TO-226AA) package with formed leads, designed for through-hole mounting. The operating junction temperature is rated up to 150°C.
| Qty | Low | High |
|---|---|---|
| 18,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) is 45V.
The maximum continuous collector current (Ic) is 800mA.
It uses a TO-226-3 / TO-92-3 (TO-226AA) through-hole package with formed leads.
The maximum operating junction temperature is 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified.
The minimum DC current gain (hFE) is 100 at a test condition of Ic=100mA and Vce=1V.
The transition frequency (ft) is 100MHz.