| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,232 pcs
|
7232 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The BC337-40TA is an NPN bipolar junction transistor (BJT) manufactured by Samsung Electronics. It is designed for low power audio amplification and general-purpose switching applications. This transistor offers a maximum collector-emitter voltage (VCEO) of 45V and can handle a continuous collector current (IC) of up to 800mA.
The current gain (hFE) for the BC337-40 variant ranges from 250 to 630, indicating its amplification capabilities. The transistor also has a collector-base voltage (VCB0) of 50V and an emitter-base voltage (VBE0) of 5V. Its transition frequency is 100MHz, making it suitable for various signal processing tasks.
Packaged in the common TO-92 form factor, the BC337-40TA is designed for through-hole mounting. Its low base trigger voltage allows for easy control by digital circuits, such as microcontrollers, enhancing its utility in general-purpose switching circuits. Complementary PNP transistors like the BC327 are available.
Key applications include low power audio amplifiers, small signal amplifiers, audio frequency driver amplifiers, output stages, and general-purpose switching. Its equivalents include parts like the 2N222, 2N3904, and 2N4404.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous collector current (IC) is 800mA.
The collector-emitter voltage (VCEO) is 45V.
The current gain (hFE) for the BC337-40 variant is 250 to 630.
The BC337-40TA is available in a TO-92 package.
The BC337-40TA is used in low power audio amplifiers, small signal amplifiers, audio frequency driver amplifiers, output stages, and general purpose switching.