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BC337-40RL1G The BC337-40RL1G is an NPN bipolar junction transistor from onsemi rated for 45V collector-emitter voltage and 800mA collector current. It comes in a through-hole TO-92 package with 625mW power dissipation.
Mfr Part #:

BC337-40RL1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BC337-40RL1G is an NPN bipolar junction transistor from onsemi rated for 45V collector-emitter voltage and 800mA collector current. It comes in a through-hole TO-92 package with 625mW power dissipation.
✓ Total Stock: 17,750 pcs

BC337-40RL1G Available from 2 distributors

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✓ Non-Authorised
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Bristol Electronics ✓
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14,000 pcs
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14000 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
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3,750 pcs
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3750 pcs On Request 1 On Request On Request On Request On Request On Request
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BC337-40RL1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BC337-40RL1G Description

Short technical summary and product information.

The BC337-40RL1G is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 45V and a collector current rating of 800mA, with a maximum power dissipation of 625mW.

 

This transistor offers a minimum DC current gain (hFE) of 250 at Ic=100mA and Vce=1V, and a maximum collector-emitter saturation voltage of 700mV at Ib=50mA and Ic=500mA. The transition frequency is typically 210MHz, making it suitable for moderate-speed switching circuits.

 

The device is housed in a TO-226-3 / TO-92-3 long body package with formed leads, and is designed for through-hole mounting. It operates over a junction temperature range of -55°C to 150°C, supporting a wide range of environmental conditions.

 

Typical applications include low-power switching circuits, signal amplification, and driver stages in consumer and industrial electronics. The through-hole TO-92 package is well-suited for prototyping and PCB designs requiring manual assembly.

BC337-40RL1G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: NPN Bipolar Transistor, 45V, 800mA, TO-92
Subcategory: Single BJT

BC337-40RL1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC337-40RL1G Features

  • NPN bipolar junction transistor for general purpose.
  • 45V collector-emitter voltage rating.
  • 800mA collector current capability.
  • 625mW maximum power dissipation.
  • TO-92 through-hole package with formed leads.

BC337-40RL1G Applications

  • Used in low-power switching circuits.
  • Suitable for signal amplification stages.
  • Ideal for driver circuits in consumer electronics.
  • Works in industrial control applications.

BC337-40RL1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BC337-40RL1G?

The BC337-40RL1G has a collector-emitter voltage rating of 45V.

What is the maximum collector current of this transistor?

The maximum collector current is 800mA.

What is the power dissipation rating of the BC337-40RL1G?

The power dissipation rating is 625mW.

What package is the BC337-40RL1G available in?

The BC337-40RL1G is available in a TO-226-3 / TO-92-3 long body package with formed leads, for through-hole mounting.

What is the operating temperature range of this transistor?

The operating junction temperature range is -55°C to 150°C.

What is the minimum DC current gain (hFE) of the BC337-40RL1G?

The minimum DC current gain (hFE) is 250, measured at Ic=100mA and Vce=1V.

What is the transition frequency of the BC337-40RL1G?

The typical transition frequency is 210MHz.

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