| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor BC337 series are silicon NPN transistors designed for general purpose amplifier and switching applications. These transistors come in a TO-92 package, suitable for through-hole mounting.
Key electrical specifications include a collector-emitter voltage (V CEO) of 45V and a continuous collector current (I C) of up to 800mA. The device exhibits a typical DC current gain (hFE) of 250-630 at 100mA collector current and 1.0V V CE. Its transition frequency (fT) is 210MHz at 5.0V V CE and 10mA I C.
Maximum ratings include a collector-base voltage (V CBO) of 50V and a power dissipation of 625mW. The operating and storage junction temperature range is -65 to +150°C. Thermal resistance is 200°C/W for junction-to-ambient and 83.3°C/W for junction-to-case.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (V CEO) of the BC337 transistor is 45V.
The maximum continuous collector current (I C) for the BC337 is 800mA.
The BC337 transistor is supplied in a TO-92 case.
The operating and storage junction temperature range for the BC337 is -65 to +150°C.
The typical DC current gain (hFE) for the BC337-40 at 1.0V V CE and 100mA I C is between 250 and 630.
The transition frequency (fT) of the BC337 is 210MHz at 5.0V V CE and 10mA I C.