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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC337-16,112 is an NPN bipolar junction transistor manufactured by NXP Semiconductors, designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 45V and a maximum continuous collector current of 500mA, with a peak collector current capability of 1A.
This transistor offers a DC current gain (hFE) range of 100 to 250 at 100mA collector current and 1V VCE, making it suitable for a variety of low-power amplification and switching circuits. The maximum VCE saturation voltage is 700mV at 50mA base current and 500mA collector current. It has a typical transition frequency of 100MHz and a maximum power dissipation of 625mW.
The BC337-16,112 is housed in a through-hole TO-92-3 package (TO-226-3, TO-92-3 (TO-226AA) Formed Leads), which is suitable for breadboard prototyping and PCB mounting. The device can operate at a maximum junction temperature of 150°C.
The maximum collector-emitter voltage (VCEO) is 45V.
The maximum continuous collector current is 500mA.
The DC current gain (hFE) ranges from 100 to 250 at IC = 100mA and VCE = 1V.
It comes in a through-hole TO-92-3 package (TO-226-3, TO-92-3 (TO-226AA) Formed Leads).
The maximum power dissipation is 625mW.
The maximum operating junction temperature is 150°C.
The typical transition frequency is 100MHz.