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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,500 pcs
|
6500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Case Code | |
| Collector-Base Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum/Maximum @ IC = -300 mA, VCE = -1 V) | |
| Emitter-Base Breakdown Voltage | |
| Frequency | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| VBE On Voltage | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC327 is a PNP silicon bipolar junction transistor designed for general purpose amplification and switching applications. Manufactured by ON Semiconductor, this transistor offers a collector-emitter breakdown voltage of -45 V and a continuous collector current rating of -800 mA. It is housed in a TO-92 through-hole package, making it suitable for a wide range of electronic circuits.
Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 630 at -100 mA collector current, ensuring consistent performance in amplifier stages. The transistor features a transition frequency (fT) of 260 MHz, enabling use in low to medium frequency applications. The saturation voltage (VCE(sat)) is typically -0.7 V at -500 mA, contributing to efficient switching operation.
The BC327 is capable of dissipating up to 625 mW at ambient temperature and 1.5 W at case temperature, with a junction-to-ambient thermal resistance of 200 °C/W. It operates over a junction temperature range of -55°C to 150°C, providing reliability in demanding environments. The device is also available in hFE-sorted variants (BC327-16, BC327-25, BC327-40) for tighter gain requirements.
This transistor is commonly used in audio amplifier driver stages, signal processing circuits, and output stages of low-power systems. Its Pb-free packaging aligns with environmental compliance standards, though RoHS status should be verified with the manufacturer for specific requirements.
| Qty | Low | High |
|---|---|---|
| 20+ | $0.03 | $0.03 |
| 200+ | $0.03 | $0.03 |
| 1,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (V(BR)CEO) is -45 V at IC = -10 mA.
The maximum continuous collector current (IC) is -800 mA.
The DC current gain ranges from 100 to 630 at IC = -100 mA, VCE = -1 V, and from 40 to 250 at IC = -300 mA, VCE = -1 V.
The typical current-gain bandwidth product (fT) is 260 MHz at IC = -10 mA, VCE = -5 V, f = 100 MHz.
The operating and storage junction temperature range is -55°C to 150°C.
The BC327 is available in a TO-92 (TO-226) through-hole package.
The part is listed as RoHS3 Compliant, but this information is unverified. Please confirm with the manufacturer.