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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
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| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC308C is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general purpose amplification and low-power switching applications.
Key electrical specifications include a maximum collector-emitter breakdown voltage (VCEO) of 25V, a maximum collector current (IC) of 100mA, and a maximum power dissipation of 500mW. The transistor offers a DC current gain (hFE) of minimum 380 at 2mA collector current and 5V VCE, and a transition frequency (ft) of 130MHz.
The device is housed in a TO-92-3 through-hole package (TO-226-3, TO-92-3) and is rated for a maximum junction temperature of 150°C. Its through-hole mounting makes it suitable for prototyping and traditional PCB assembly.
PNP
25V
100mA
Minimum 380 at Ic=2mA, Vce=5V
500mW
TO-92-3 (TO-226-3, TO-92-3)
150°C