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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,301 pcs
|
2301 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC237TFR is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications in through-hole circuits.
Key electrical specifications include a collector-emitter breakdown voltage of 45V, a collector current rating of 100mA, and a power dissipation of 500mW. The transistor offers a transition frequency of 250MHz and a minimum DC current gain (hFE) of 120 at Ic=2mA and Vce=5V. The maximum collector-emitter saturation voltage is 600mV at Ib=5mA and Ic=100mA.
The device is housed in a TO-226-3 / TO-92-3 (TO-226AA) package with formed leads, suitable for through-hole mounting. The supplier device package is TO-92-3. The operating junction temperature is rated up to 150°C.
The collector-emitter breakdown voltage is 45V.
The maximum collector current is 100mA.
The power dissipation is 500mW.
The transition frequency is 250MHz.
The BC237TFR is available in a TO-226-3 / TO-92-3 (TO-226AA) package with formed leads, and the supplier device package is TO-92-3.
The operating junction temperature is rated up to 150°C.
The BC237TFR is marked as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer or distributor.