BC237 BC237 is an NPN epitaxial silicon transistor designed for switching and amplifier applications. Key ratings: 45V collector-emitter voltage, 100mA collector current, 500mW power dissipation.
Mfr Part #:

BC237

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BC237 is an NPN epitaxial silicon transistor designed for switching and amplifier applications. Key ratings: 45V collector-emitter voltage, 100mA collector current, 500mW power dissipation.
✓ Total Stock: 4 pcs
$ Price Range: $0.07

BC237 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4 pcs
4 pcs On Request 1 On Request On Request On Request On Request On Request

BC237 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Junction Temperature
Lead Style
Mounting Type
Operating Temperature
Power
Power Dissipation
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC237 Description

Short technical summary and product information.

The BC237 is an NPN epitaxial silicon bipolar junction transistor manufactured by On Semiconductor (formerly Fairchild Semiconductor). It is designed for general-purpose switching and amplifier applications.

 

Key electrical characteristics include a minimum collector-emitter breakdown voltage (BVCEO) of 45V, a maximum collector current of 100mA, and a maximum power dissipation of 500mW. The DC current gain (hFE) is a minimum of 120 at 2mA collector current and 5V collector-emitter voltage. The current gain bandwidth product (fT) is typically 150MHz at 3V and 0.5mA, and 85MHz at 5V and 10mA. The output capacitance (Cob) is typically 3.5pF.

 

The device is housed in a through-hole TO-92 (TO-226) package with three leads. It supports an operating junction temperature range of -55°C to 150°C.

BC237 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BC237 NPN Epitaxial Silicon Transistor
Subcategory: Single BJT

BC237 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC237 Estimated Pricing

Qty Low High
4,537+ $0.07 $0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC237 Features

  • NPN epitaxial silicon bipolar transistor.
  • 45V minimum collector-emitter breakdown voltage.
  • 100mA maximum DC collector current.
  • 500mW maximum power dissipation.
  • Through-hole TO-92 package for easy mounting.

BC237 Applications

  • General purpose switching circuits.
  • Low-frequency amplifier stages.
  • Signal processing and driver circuits.

BC237 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the BC237?

The maximum collector-emitter voltage (VCES) is 50V, and the minimum collector-emitter breakdown voltage (BVCEO) is 45V.

What is the maximum collector current of the BC237?

The maximum DC collector current is 100mA.

What is the power dissipation rating of the BC237?

The maximum power dissipation is 500mW.

What package does the BC237 come in?

The BC237 is available in a through-hole TO-92 (TO-226) package.

What is the operating temperature range for the BC237?

The operating junction temperature range is -55°C to 150°C.

Is the BC237 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and has low confidence.

Home

Categories