| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Junction Temperature | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC237 is an NPN epitaxial silicon bipolar junction transistor manufactured by On Semiconductor (formerly Fairchild Semiconductor). It is designed for general-purpose switching and amplifier applications.
Key electrical characteristics include a minimum collector-emitter breakdown voltage (BVCEO) of 45V, a maximum collector current of 100mA, and a maximum power dissipation of 500mW. The DC current gain (hFE) is a minimum of 120 at 2mA collector current and 5V collector-emitter voltage. The current gain bandwidth product (fT) is typically 150MHz at 3V and 0.5mA, and 85MHz at 5V and 10mA. The output capacitance (Cob) is typically 3.5pF.
The device is housed in a through-hole TO-92 (TO-226) package with three leads. It supports an operating junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 4,537+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) is 50V, and the minimum collector-emitter breakdown voltage (BVCEO) is 45V.
The maximum DC collector current is 100mA.
The maximum power dissipation is 500mW.
The BC237 is available in a through-hole TO-92 (TO-226) package.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and has low confidence.