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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,288 pcs
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1288 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC213 is a PNP bipolar junction transistor manufactured by On Semiconductor. It features a maximum collector-emitter voltage (V_CEO) of 30V and a maximum collector current (I_C) of 500mA. The device can dissipate up to 625mW of power. DC current gain (hFE) is a minimum of 80 at 2mA collector current and 5V collector-emitter voltage. The collector-emitter saturation voltage (V_CE(sat)) is a maximum of 600mV at 5mA base current and 100mA collector current. Transition frequency (f_T) is typically 200MHz.
The transistor is housed in a through-hole TO-92-3 package (TO-226-3, TO-92-3 (TO-226AA)). It is suitable for general-purpose switching and amplification applications where moderate voltage and current ratings are required. The BC213 is RoHS3 compliant, REACH unaffected, and has a moisture sensitivity level (MSL) of 1 (unlimited).
The maximum collector-emitter voltage (V_CEO) is 30V.
The maximum collector current (I_C) is 500mA.
The maximum power dissipation is 625mW.
The minimum DC current gain is 80 at Ic=2mA, Vce=5V.
The typical transition frequency is 200MHz.
The BC213 is available in a through-hole TO-92-3 package (TO-226-3, TO-92-3 (TO-226AA)).
Yes, the BC213 is RoHS3 compliant.