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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
775 pcs
|
775 pcs | On Request | 1 | On Request | On Request | 1103+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter On Voltage (VBE(ON)) | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Current (Ic) | |
| Collector Cut-off Current (ICBO) | |
| Collector-Base Breakdown Voltage (V(BR)CBO) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | |
| Emitter-Base Leakage Current (IEBO) | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Lead Spacing | |
| Mounting Type | |
| Noise Figure (NF) | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Small Signal Current Gain (hfe) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction to Ambient (RθJA) | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| collector-emitter-saturation-voltage (Maximum @ IC=10 mA, IB=0.5 mA) | |
| dc-current-gain (Minimum @ VCE=5 V, IC=100 mA) |
The BC182LB is an NPN bipolar junction transistor designed for general purpose amplifier applications. Manufactured by On Semiconductor (formerly Fairchild Semiconductor), this device is suitable for use in low to medium current amplification stages.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V, collector current (IC) of 100mA, and a collector-base voltage (VCBO) of 60V. The DC current gain (hFE) is a minimum of 80 at VCE=5V and IC=100mA, with a transition frequency (fT) of 150MHz typical. The noise figure is 10dB typical, making it suitable for low-noise applications.
The transistor is housed in a through-hole TO-92-3 package with a lead spacing of 1.27mm. It has a maximum power dissipation of 350mW at 25°C ambient, with a thermal resistance of 357°C/W junction-to-ambient. The operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V (absolute maximum rating).
TO-92-3 (through-hole).
-55°C to 150°C (junction temperature).
RoHS3 Compliant (unverified).
Minimum 80 at VCE=5V, IC=100mA.
150 MHz typical at VCE=5V, IC=10mA, f=100MHz.
10 dB typical at VCE=5V, IC=0.2mA, RS=2kΩ, f=1kHz, BW=200Hz.