| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,421 pcs
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1421 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BBY57-02V is a silicon tuning diode designed for low tuning voltage operation in VCOs and other mobile communications equipment. It features a high Q hyperabrupt junction, low series resistance of 0.3 Ohm typical at 1V and 470MHz, and a high capacitance ratio.
Key electrical characteristics include a maximum reverse voltage of 10V, maximum forward current of 20mA, and a reverse current of 10nA maximum at VR=8V. The diode capacitance varies with reverse voltage: 17.5pF typical at 1V, 9.35pF at 2.5V, 7pF at 3V, and 4.7pF typical at 4V (1MHz). The capacitance ratio C1/C4 is 3.7 typical.
The device is qualified according to AEC Q101 and is RoHS compliant. It is supplied in a PG-SC79-2 surface-mount package with a lead inductance of 0.6nH typical. Operating temperature range is -55°C to 125°C.
The maximum reverse voltage is 10 V.
The maximum forward current is 20 mA.
At VR=1V and f=1MHz, the diode capacitance is 16.5 pF minimum, 17.5 pF typical, and 18.6 pF maximum.
The BBY57-02V is supplied in a PG-SC79-2 surface-mount package (SC-79).
Yes, it is qualified according to AEC Q101.
The operating temperature range is -55°C to 125°C.
The typical series resistance is 0.3 Ohm at VR=1V and f=470MHz.