| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
929 pcs
|
929 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
929 pcs
|
929 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Forward Current | |
| Mounting Type | |
| Reverse Voltage | |
| SVHC Present | |
| Storage Temperature |
The BBY31 is a silicon varactor diode designed for voltage-controlled tuning applications. Manufactured by NXP Semiconductors, this device offers a maximum continuous reverse voltage of 30 V and a maximum continuous forward current of 20 mA.
Key electrical characteristics include a diode capacitance of 16.5 pF maximum at 1 V reverse bias and 1 MHz, and a typical capacitance of 1.9 pF at 28 V reverse bias. The capacitance ratio is typically 8.3 at 1 MHz. The diode series resistance is 1.2 ohms maximum at 470 MHz. Reverse current is 10 nA maximum at 28 V and 200 nA maximum at 85 °C.
The device is housed in a surface-mount SOT-23 package and operates over a junction temperature range of -55 to +125 °C. Storage temperature range is -55 to +150 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V continuous.
20 mA continuous.
16.5 pF maximum at 1 V and 1 MHz.
8.3 typical at 1 MHz.
-55 to +125 °C.
SOT-23 surface-mount package.