| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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810,000 pcs
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810000 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
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| Supplier Device Package | |
| Tape & Reel | |
| Voltage |
The Infineon BBY66-05E6327 is a hyperabrupt silicon tuning diode designed for low voltage VCOs in mobile communication equipment. It features a high capacitance ratio (C1V/C4.5V = 5.41 typical) and low series resistance (0.25Ω typical at 470MHz) for high Q performance. The dual common cathode configuration in a SOT-23 package simplifies circuit layout and reduces component count. Electrical characteristics include maximum reverse voltage of 12V, forward current of 50mA, and capacitance values from 71.5pF at 1V to 13.5pF at 4.5V. The diode is qualified according to AEC Q101 for automotive applications and is delivered in a Pb-free, RoHS compliant package. Operating temperature range is -55°C to 150°C.
Maximum reverse voltage is 12V.
Maximum forward current is 50mA.
Surface-mount SOT-23 package (TO-236-3, SC-59 equivalent).
The capacitance ratio C1V/C4.5V is typically 5.41 with a minimum of 5.
Typical 0.25Ω, maximum 0.4Ω at VR=1V and f=470MHz.
-55°C to 150°C.
It is a dual diode with common cathode configuration (1 pair).