| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
57,000 pcs
|
57000 pcs | On Request | 1 | On Request | On Request | 0643+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Capacitance Ratio | |
| Capacitance Ratio Condition | |
| Diode Type | |
| Forward Current | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Voltage |
The BBY53E6327 from Infineon Technologies is a silicon tuning diode designed for low voltage operation in VCOs and mobile communications equipment. As a hyperabrupt tuning diode, it delivers high Q factor and a high capacitance ratio at low reverse voltages.
The diode has a maximum reverse voltage of 6V and a forward current of 20mA. Its capacitance characteristics are specified at 1MHz: typical capacitance at 1V is 5.3pF (range 4.8-5.8pF), and at 3V is 2.4pF (range 1.85-3.1pF). The capacitance ratio C1/C3 has a typical value of 2.2 with a range of 1.8 to 2.6. Series resistance is typically 0.47Ω at 1V and 1GHz. Reverse current is limited to 10nA at 4V (200nA at 85°C).
The device is configured as a common cathode pair and is housed in a SOT-23 package (TO-236-3, SC-59, SOT-23-3) with surface mount termination. It operates over a junction temperature range of -55°C to 125°C and is supplied on tape and reel. The package is Pb-free and RoHS compliant according to the datasheet.
| Qty | Low | High |
|---|---|---|
| 6,000+ | $0.12 | $0.12 |
| 9,000+ | $0.11 | $0.11 |
| 15,000+ | $0.11 | $0.11 |
| 21,000+ | $0.10 | $0.10 |
| 30,000+ | $0.10 | $0.10 |
| 75,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
6V
20mA
Typical 5.3pF with a range of 4.8pF to 5.8pF at 1MHz.
Typical 2.2, minimum 1.8, maximum 2.6.
Typically 0.47 ohms at 1V and 1GHz.
SOT-23 (TO-236-3, SC-59, SOT-23-3).
-55°C to 125°C junction temperature.