| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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132,000 pcs
|
132000 pcs | On Request | 1 | On Request | On Request | 1001+ | On Request | On Request |
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The Infineon BBY53-02V is a high-Q hyperabrupt silicon tuning diode designed for low tuning voltage operation in VCOs for mobile communications equipment. It features a high capacitance ratio at low reverse voltage, making it ideal for voltage-controlled oscillator applications.
Key electrical characteristics include a maximum reverse voltage of 6V, a maximum forward current of 20mA, and a typical diode capacitance of 3.1pF at 3V and 1MHz. The capacitance ratio (C1/C3) is typically 2.6, and the series resistance is typically 0.47Ω at 1V and 1GHz. The device operates over a temperature range of -55°C to 125°C.
The BBY53-02V is housed in a leadless SC-79 (SOD-523) surface-mount package, which is Pb-free and RoHS compliant. This package is suitable for automated assembly and space-constrained designs.
The maximum reverse voltage is 6V.
The typical capacitance is 3.1pF at 3V and 1MHz.
The typical capacitance ratio (C1/C3) is 2.6.
The operating temperature range is -55°C to 125°C.
The BBY53-02V is available in a SC-79 (SOD-523) surface-mount package.