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BBS3002-DL-E Sanyo Denki BBS3002-DL-E is a P-Channel power MOSFET rated for 60V drain-source voltage and 100A continuous drain current, with a low 5.8mΩ on-resistance. Housed in a surface-mount TO-252-3 (DPak) package.
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BBS3002-DL-E

Available from 1 distributors
Mfr Name: Sanyo Denki
Sanyo Denki
Sanyo Denki BBS3002-DL-E is a P-Channel power MOSFET rated for 60V drain-source voltage and 100A continuous drain current, with a low 5.8mΩ on-resistance. Housed in a surface-mount TO-252-3 (DPak) package.
✓ Total Stock: 8,647 pcs

BBS3002-DL-E Available from 1 distributor

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8,647 pcs
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BBS3002-DL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
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BBS3002-DL-E Description

Short technical summary and product information.

The Sanyo Denki BBS3002-DL-E is a P-Channel enhancement-mode power MOSFET designed for high-current switching applications. It features a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) rating of 100A at ambient temperature. The device achieves a low on-resistance (Rds(on)) of 5.8mΩ maximum at Vgs = 10V and Id = 50A, enabling efficient power handling with reduced conduction losses.

 

This MOSFET is housed in a compact surface-mount TO-252-3 (DPak) package, also known as SC-63, which is suitable for automated assembly processes. The device supports a gate drive voltage range of 4V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. It offers a maximum power dissipation of 90W at case temperature (Tc) and operates over a junction temperature range of -55°C to +150°C.

 

The BBS3002-DL-E is well-suited for power management circuits, load switching, and DC-DC converter applications where P-Channel polarity simplifies high-side drive design. Its low on-resistance and high current capability make it a robust choice for demanding power control tasks.

BBS3002-DL-E Quick Information

Product Type: Power MOSFET
Canonical Name: Sanyo Denki BBS3002-DL-E P-Channel Power MOSFET, 60V, 100A, TO-252-3 (DPak)
Subcategory: Single MOSFET

BBS3002-DL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BBS3002-DL-E Features

  • P-Channel MOSFET rated for 60V drain-source voltage.
  • Continuous drain current up to 100A.
  • Low on-resistance of 5.8mΩ maximum.
  • Surface-mount TO-252-3 (DPak) package.
  • Wide operating junction temperature range -55°C to +150°C.

BBS3002-DL-E Applications

  • High-side load switching in power supplies.
  • DC-DC converter and regulator circuits.
  • Battery protection and management systems.
  • Motor drive and actuator control.
  • Power distribution and OR-ing applications.

BBS3002-DL-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BBS3002-DL-E?

The maximum drain-source voltage (Vdss) is 60V.

What is the continuous drain current rating?

The continuous drain current (Id) is 100A at ambient temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds(on)) is 5.8mΩ at Vgs = 10V and Id = 50A.

What package type is the BBS3002-DL-E available in?

It is available in a surface-mount TO-252-3 (DPak) package, also known as SC-63.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

What is the maximum power dissipation?

The maximum power dissipation is 90W at case temperature (Tc).

What is the gate drive voltage requirement?

The gate drive voltage range is 4V to 10V, with a maximum gate-source voltage of ±20V.

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