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BBS3002-DL-1E P-Channel MOSFET with 60V drain-source voltage and 100A continuous drain current. Surface mount D2PAK package.
Mfr Part #:

BBS3002-DL-1E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET with 60V drain-source voltage and 100A continuous drain current. Surface mount D2PAK package.
Total Stock: 5,050 pcs

BBS3002-DL-1E Available from 1 distributor

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BBS3002-DL-1E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)

BBS3002-DL-1E Description

Short technical summary and product information.

The BBS3002-DL-1E is a P-Channel MOSFET from On Semiconductor, designed for high-current switching applications. It features a drain-to-source voltage rating of 60V and a continuous drain current of 100A at 25°C ambient temperature. The device offers a low maximum on-resistance of 5.8 mΩ at 50A and 10V gate drive, enabling efficient power handling.

 

This MOSFET supports gate drive voltages of 4V and 10V, with a maximum gate-source voltage of ±20V. It has a maximum gate charge of 280 nC at 10V and an input capacitance of 13200 pF at 20V drain-source voltage, providing predictable switching performance. The device can dissipate up to 90W at 25°C case temperature and operates with a junction temperature up to 150°C.

 

The BBS3002-DL-1E is housed in a TO-263-3 (D2PAK) surface mount package, suitable for automated assembly. It is intended for use in power management, load switching, and other high-current applications where P-Channel MOSFETs are required. The device is RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified.

BBS3002-DL-1E Quick Information

Product Type: P-Channel MOSFET
Series: BBS3002
Canonical Name: P-Channel MOSFET, 60V, 100A, D2PAK
Subcategory: Single MOSFET

BBS3002-DL-1E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BBS3002-DL-1E Features

  • P-Channel MOSFET with 60V drain-source voltage.
  • 100A continuous drain current at 25°C.
  • Low on-resistance of 5.8 mΩ at 50A.
  • Surface mount D2PAK package for easy assembly.
  • Supports 4V and 10V gate drive voltages.

BBS3002-DL-1E Applications

  • Used in high-current load switching circuits.
  • Suitable for power management in DC-DC converters.
  • Ideal for battery protection and reverse polarity protection.
  • Used in automotive and industrial power applications.

BBS3002-DL-1E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the BBS3002-DL-1E?

The drain-to-source voltage (Vdss) is 60V.

What is the maximum continuous drain current?

The continuous drain current is 100A at 25°C ambient temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 5.8 mΩ at 50A drain current and 10V gate-source voltage.

What is the operating temperature range?

The maximum junction temperature is 150°C.

What package is the BBS3002-DL-1E available in?

It is available in a TO-263-3 (D2PAK) surface mount package.

Is the BBS3002-DL-1E RoHS compliant?

The device is listed as RoHS3 compliant, but this status is unverified.

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