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706 pcs
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706 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BAW56W,135 is a high-speed switching diode from NXP Semiconductors, designed for general-purpose and high-speed switching applications. It features a maximum reverse voltage of 90V and a forward current of 215mA per diode at 25°C ambient temperature. The diode offers a fast reverse recovery time of 4ns and a low diode capacitance of 2pF, making it suitable for high-frequency circuits.
This device is housed in a small SOT23 (TO-236AB) surface-mount plastic package with gull wing leads, measuring 2.9mm x 1.3mm x 1mm body and 1.9mm pitch. It is a dual diode with common anode configuration, providing two independent diodes in a single package. The maximum junction temperature is 150°C, and the storage temperature range is -65°C to 150°C.
Key electrical characteristics include a forward voltage of 715mV at 1mA, 855mV at 10mA, and 1V at 50mA. Reverse current is limited to 0.5µA at 80V reverse voltage. Total power dissipation per diode is 250mW when mounted on FR4 PCB. Thermal resistance from junction to ambient is 500K/W, and from junction to solder point is 360K/W.
The maximum reverse voltage is 90V.
The maximum forward current is 215mA per diode at 25°C ambient temperature.
The maximum reverse recovery time is 4ns (test conditions: IF=10mA, IR=10mA, RL=100Ω, IR(meas)=1mA, Tamb=25°C).
It is available in a SOT23 surface mount plastic package with gull wing leads.
The maximum forward voltage at 10mA and 25°C is 855mV.
The maximum diode capacitance is 2pF.