BAW56E6327 BAW56E6327 is a silicon switching diode array with common anode configuration, rated for 80V reverse voltage and 200mA forward current.
Mfr Part #:

BAW56E6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
BAW56E6327 is a silicon switching diode array with common anode configuration, rated for 80V reverse voltage and 200mA forward current.
Total Stock: 2,995 pcs

BAW56E6327 Available from 1 distributor

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BAW56E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage
Current
Diode Capacitance
Diode Configuration
Diode Reverse Voltage
Forward Current
Forward Voltage (Maximum @ IF = 1 mA)
Forward Voltage (Maximum @ IF = 10 mA)
Forward Voltage (Maximum @ IF = 100 mA)
Forward Voltage (Maximum @ IF = 150 mA)
Forward Voltage (Maximum @ IF = 50 mA)
Junction Temperature
Mounting Type
Non-repetitive Peak Surge Forward Current
Operating Temperature
Package / Case
Peak Reverse Voltage
Reverse Current @ 70 V
Reverse Recovery Time (trr)
Speed
Storage Temperature
Supplier Device Package
Technology
Total Power Dissipation
Voltage

BAW56E6327 Description

Short technical summary and product information.

The BAW56E6327 from Infineon Technologies is a silicon switching diode array featuring a common anode configuration with two diodes in a single SOT23 surface mount package. It is designed for high-speed switching applications with a maximum reverse recovery time of 4 ns.

 

Key electrical ratings include a maximum reverse voltage of 80 V, peak reverse voltage of 85 V, and a forward current of 200 mA. Forward voltage is specified at multiple current levels, with a maximum of 1.25 V at 150 mA. The device can handle non-repetitive peak surge forward current up to 4.5 A for 1 µs pulses.

 

The BAW56E6327 is qualified according to AEC Q101 and is supplied in a Pb-free (RoHS compliant) package. It operates over a junction temperature range of -65°C to 150°C and has a total power dissipation of 330 mW at 28°C soldering point temperature.

BAW56E6327 Quick Information

Product Type: Diode Array
Canonical Name: BAW56E6327 Silicon Switching Diode Array
Subcategory: Rectifier Diode Array

BAW56E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free (RoHS compliant package)

BAW56E6327 Features

  • Common anode dual diode configuration.
  • 80V maximum reverse voltage rating.
  • 200mA forward current capability.
  • 4 ns fast reverse recovery time.
  • Surface mount SOT23 package.

BAW56E6327 Applications

  • High-speed switching circuits.
  • Signal rectification and clamping.
  • Protection and logic circuits.
  • Automotive electronic modules.

BAW56E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of BAW56E6327?

The maximum reverse voltage is 80 V, with a peak reverse voltage of 85 V.

What is the forward current rating?

The maximum forward current is 200 mA.

What is the reverse recovery time?

The maximum reverse recovery time is 4 ns, tested at IF=10mA, IR=10mA, measured at IR=1mA, RL=100Ω.

What is the forward voltage at 150 mA?

The maximum forward voltage at 150 mA is 1.25 V.

What package is BAW56E6327 available in?

It is available in surface mount SOT23 package (TO-236-3, SC-59, SOT-23-3).

Is BAW56E6327 RoHS compliant?

Yes, it is supplied in a Pb-free (RoHS compliant) package, verified by the datasheet.

What is the operating temperature range?

The maximum junction temperature is 150°C, and storage temperature range is -65°C to 150°C.

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