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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,000 pcs
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24000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr=0, F=1MHz | |
| Current | |
| Derating Factor (@ Alumina substrate) | |
| Derating Factor (@ FR -5 board) | |
| Diode Configuration | |
| Forward Current (Continuous) | |
| Forward Surge Current (Peak) | |
| Forward Voltage (Maximum @ IF = 1 mA) | |
| Forward Voltage (Maximum @ IF = 10 mA) | |
| Forward Voltage (Maximum @ IF = 150 mA) | |
| Forward Voltage (Maximum @ IF = 50 mA) | |
| Junction and Storage Temperature Range | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature Range | |
| Package / Case | |
| Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C) | |
| Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C) | |
| Reverse Leakage Current (Maximum @ VR = 25 V, TJ = 150 °C) | |
| Reverse Leakage Current (Maximum @ VR = 70 V, TJ = 150 °C) | |
| Reverse Leakage Current (Maximum @ VR=70 V) | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance Junction To Ambient (Typical @ Alumina substrate) | |
| Thermal Resistance Junction To Ambient (Typical @ FR -5 board) | |
| Voltage | |
| Voltage - Reverse (Vr) (Max) | |
| Weight |
The BAW56-G is a dual common anode fast switching diode array manufactured by Comchip Technology. It features two standard silicon diodes in a common anode configuration, designed for general purpose switching applications requiring fast recovery times.
Key electrical specifications include a maximum continuous reverse voltage of 70V, a maximum continuous forward current of 215mA, and a peak forward surge current of 500mA. The device offers fast switching with a maximum reverse recovery time of 6ns (tested at IF=IR=10mA). Forward voltage is typically 1.25V at 150mA, with lower values at reduced currents (715mV at 1mA, 855mV at 10mA, 1000mV at 50mA). Reverse leakage current is a maximum of 2.5µA at 70V, increasing to 50µA at 150°C junction temperature. Diode capacitance is typically 1.5pF at 0V bias.
The device is housed in a standard SOT-23 surface mount package (SOT-23-3), weighing approximately 0.008 grams. Power dissipation is 225mW on an FR-5 board and 300mW on an alumina substrate, with derating factors of 1.8mW/°C and 2.4mW/°C respectively. The junction and storage temperature range is -55°C to +150°C. This diode array is suitable for automated assembly and is commonly used in high-density circuit designs.
The maximum continuous reverse voltage is 70V.
The maximum continuous forward current is 215mA, with a peak surge current of 500mA.
The maximum reverse recovery time is 6ns (tested at IF=IR=10mA, IR(REC)=1mA, RL=100Ω).
The BAW56-G is available in a SOT-23 surface mount package (SOT-23-3).
The maximum forward voltage is 1.25V at 150mA.