BAW156E6327HTSA1 Infineon BAW156E6327HTSA1 is a silicon low leakage diode array with common anode configuration. It features 80V reverse voltage, 200mA forward current, and fast switching with 1.5µs reverse recovery time.
Mfr Part #:

BAW156E6327HTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon BAW156E6327HTSA1 is a silicon low leakage diode array with common anode configuration. It features 80V reverse voltage, 200mA forward current, and fast switching with 1.5µs reverse recovery time.
Total Stock: 30,000 pcs
$ Price Range: $0.21 - $0.33

BAW156E6327HTSA1 Available from 1 distributor

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BAW156E6327HTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
AEC-Q101
Automotive Grade
Breakdown Voltage
Current
Diode Capacitance
Diode Configuration
Diode Reverse Voltage
Forward Current
Forward Voltage (Maximum @ IF = 1 mA)
Forward Voltage (Maximum @ IF = 10 mA)
Forward Voltage (Maximum @ IF = 150 mA)
Forward Voltage (Maximum @ IF = 50 mA)
Junction - Soldering Point Thermal Resistance
Junction Temperature
Lead Style
Mounting Type
Operating Temperature
Peak Reverse Voltage
Reverse Current (Maximum @ VR = 75 V)
Reverse Current (Maximum @ VR = 75 V, TA = 150 °C)
Reverse Recovery Time (Typical/Maximum @ IF = 10 mA, IR = 10 mA, measured at IR = 1 mA, RL = 100 Ω)
Reverse Recovery Time (trr)
SVHC Present
Speed
Standard Packing
Storage Temperature
Supplier Device Package
Surge Current (Maximum @ t=1 µs)
Tape & Reel
Technology
Total Power Dissipation
Voltage

BAW156E6327HTSA1 Description

Short technical summary and product information.

The BAW156E6327HTSA1 is a silicon low leakage diode array from Infineon Technologies, featuring a common anode configuration with two diodes in a single SOT23 package. It is designed for low-leakage applications and medium speed switching. Key electrical characteristics include a maximum reverse voltage of 80V, peak reverse voltage of 85V, and a forward current rating of 200mA. The forward voltage is typically 1.25V at 150mA, and the reverse recovery time is 1.5µs maximum (0.6µs typical). The device is qualified according to AEC Q101, making it suitable for automotive applications. The SOT23 package (PG-SOT23) is surface mount, with a total power dissipation of 250mW. The diode capacitance is 2pF typical. This component is ideal for low-leakage, medium-speed switching circuits where space is limited.

BAW156E6327HTSA1 Quick Information

Product Type: Diode Array
Series: BAW156
Canonical Name: Infineon BAW156E6327HTSA1 Silicon Low Leakage Diode Array
Subcategory: General Purpose Diode Array

BAW156E6327HTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BAW156E6327HTSA1 Estimated Pricing

Qty Low High
1+ $0.33 $0.33
10+ $0.21 $0.21
3,000+ $0.21 $0.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

BAW156E6327HTSA1 Features

  • Common anode dual diode configuration.
  • Low leakage current of 5 nA at 75 V.
  • Fast reverse recovery time of 1.5 µs.
  • AEC Q101 qualified for automotive use.
  • Surface mount SOT23 package.

BAW156E6327HTSA1 Applications

  • Low-leakage analog signal switching.
  • Medium-speed switching circuits.
  • Automotive electronic control units.
  • Protection circuits requiring low leakage.

BAW156E6327HTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the BAW156E6327HTSA1?

80 V.

What is the maximum forward current rating?

200 mA.

What is the forward voltage at 150 mA?

1.25 V maximum.

What is the reverse recovery time?

1.5 µs maximum (0.6 µs typical).

What package is the BAW156E6327HTSA1 available in?

SOT23 (TO-236-3, SC-59, SOT-23-3).

What is the reverse leakage current at 75 V?

5 nA maximum at 25°C.

Is this component AEC Q101 qualified?

Yes, it is qualified according to AEC Q101.

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