| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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646 pcs
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646 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
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458 pcs
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458 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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458 pcs
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458 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BAV99S,135 from NXP Semiconductors is a standard diode array designed for general-purpose applications. It offers a maximum DC reverse voltage of 100V and an average rectified current of 200mA per diode.
The forward voltage is a maximum of 1.25V at 150mA, with a fast small signal speed and a reverse recovery time of 4ns. The reverse leakage current is rated at 500nA at 80V. This component operates within a junction temperature range of -55°C to 150°C.
Packaged in a 6-TSSOP, SC-88, SOT-363, the BAV99S,135 is suitable for surface mounting. Its configuration consists of 2 pairs in series connection, making it a versatile component for various electronic circuits requiring diode functionality.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (Vr) is 100V.
The average rectified current (Io) per diode is 200mA.
The forward voltage (Vf) is 1.25V at 150mA.
The reverse recovery time (trr) is 4ns.
The device is available in a 6-TSSOP, SC-88, SOT-363 surface mount package.
The diode configuration is 2 Pair Series Connection.
The maximum operating junction temperature is 150°C.