BAV99LT3G BAV99LT3G is a dual series switching diode array from On Semiconductor, rated for 100V reverse voltage and 215mA forward current per diode. It features fast recovery time of ≤6ns and is housed in a surface-mount SOT-23 package.
Mfr Part #:

BAV99LT3G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
BAV99LT3G is a dual series switching diode array from On Semiconductor, rated for 100V reverse voltage and 215mA forward current per diode. It features fast recovery time of ≤6ns and is housed in a surface-mount SOT-23 package.
Total Stock: 166,373 pcs
$ Price Range: $0.02 - $0.14

BAV99LT3G Available from 4 distributors

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131,020 pcs
131020 pcs On Request 1 On Request On Request On Request On Request On Request
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31,888 pcs
31888 pcs On Request 1 On Request On Request 13+ On Request On Request
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2,480 pcs
2480 pcs On Request 1 On Request On Request On Request On Request On Request
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985 pcs
985 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

BAV99LT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Average Rectified Forward Current
Current
Diode Capacitance
Diode Configuration
Forward Current (Continuous)
Forward Recovery Voltage
Forward Voltage (Maximum @ IF = 1 mA)
Forward Voltage (Maximum @ IF = 10 mA)
Forward Voltage (Maximum @ IF = 50 mA)
Halogen Free
Industrial Grade
Lead Spacing
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Peak Forward Surge Current (Maximum @ t=1.0 ms)
Peak Forward Surge Current (Maximum @ t=1.0 s)
Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C)
Repetitive Peak Forward Current
Reverse Breakdown Voltage
Reverse Leakage Current (Maximum @ VR = 25 V, TJ = 150 °C)
Reverse Leakage Current (Maximum @ VR = 70 V, TJ = 150 °C)
Reverse Leakage Current (Maximum @ VR=100 V, TA=25 °C)
Reverse Recovery Time (trr)
Reverse Voltage
SVHC Present
Speed
Standard Package Quantity
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate)
Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board)
Voltage

BAV99LT3G Description

Short technical summary and product information.

The BAV99LT3G is a dual series switching diode array manufactured by On Semiconductor. Each diode is rated for a maximum reverse voltage of 100V and a continuous forward current of 215mA. The device offers fast switching performance with a reverse recovery time of 6ns (tested at IF=IR=10mA, RL=100Ω), making it suitable for high-speed switching applications.

 

Electrical characteristics include a forward voltage of 1.25V maximum at 150mA, and a peak forward surge current of 500mA (1s pulse) or 2.0A (1μs pulse). The diodes are configured as a series pair with a common cathode/anode pinout, ideal for applications requiring two isolated switching diodes in a single package.

 

The device is housed in a surface-mount SOT-23 (TO-236) package with gull-wing leads, rated for operating junction temperatures from -65°C to +150°C. Power dissipation is 225mW on FR-5 board and 300mW on alumina substrate. The part is supplied in tape and reel packaging with 10,000 units per reel.

BAV99LT3G Quick Information

Product Type: Dual Series Switching Diode Array
Series: BAV99L
Canonical Name: BAV99LT3G Dual Series Switching Diode 100V 215mA SOT-23
Subcategory: Rectifier Diode Array

BAV99LT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

BAV99LT3G Estimated Pricing

Qty Low High
1+ $0.14 $0.14
10+ $0.09 $0.09
50+ $0.06 $0.06
100+ $0.05 $0.05
500+ $0.04 $0.04
10,000+ $0.02 $0.02
20,000+ $0.02 $0.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

BAV99LT3G Features

  • Dual series switching diode array.
  • 100V maximum reverse voltage rating.
  • 215mA continuous forward current per diode.
  • Fast recovery time of 6ns maximum.
  • Surface-mount SOT-23 (TO-236) package.

BAV99LT3G Applications

  • High-speed switching power supplies.
  • Signal clamping and protection circuits.
  • Logic level shifting and steering.
  • DC-DC converter snubber networks.

BAV99LT3G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the BAV99LT3G?

The maximum reverse voltage is 100V per diode.

What is the forward current rating of the BAV99LT3G?

The continuous forward current is 215mA per diode, with a peak forward surge current of 500mA (1s pulse) and 2.0A (1μs pulse).

What is the reverse recovery time of the BAV99LT3G?

The reverse recovery time is 6ns maximum, tested at IF=IR=10mA, RL=100Ω.

What package does the BAV99LT3G come in?

The BAV99LT3G is housed in a surface-mount SOT-23 (TO-236) package with gull-wing leads.

What is the operating temperature range of the BAV99LT3G?

The operating junction and storage temperature range is -65°C to +150°C.

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