| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 1970-01-01 00:00:00 | On Request | On Request | |
|
105 pcs
|
105 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC-Q101 Qualified | |
| Breakdown Voltage Minimum | |
| Current | |
| Diode Capacitance (Maximum) | |
| Diode Configuration | |
| Diode Reverse Voltage | |
| Forward Current | |
| Forward Voltage (Typical @ IF=1 mA) | |
| Forward Voltage (Typical @ IF=10 mA) | |
| Forward Voltage (Typical @ IF=50 mA) | |
| Junction Temperature | |
| Mounting Type | |
| Non-repetitive Peak Surge Forward Current (t=1µs) | |
| Operating Temperature | |
| Operating Temperature Range | |
| Package / Case | |
| Peak Reverse Voltage | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Technology | |
| Total Power Dissipation (BAV99, TS≤28°C) | |
| Voltage | |
| forward_voltage (Maximum @ IF = 150 mA) | |
| forward_voltage (Typical @ IF=100 mA) | |
| reverse_current (Maximum @ VR = 25 V, TA = 150 °C) | |
| reverse_current (Maximum @ VR = 70 V, TA = 150 °C) | |
| reverse_current (Maximum @ Vr = 70 V, TA = 25 °C) |
The BAV99E6327 is a series pair silicon switching diode manufactured by Infineon Technologies. It is designed for high-speed switching applications and features a maximum reverse voltage of 80V and a peak reverse voltage of 85V. The forward current rating is 200mA, with a non-repetitive peak surge forward current of 4.5A at 1µs.
The diode exhibits a maximum forward voltage of 1.25V at 150mA, with typical forward voltages of 715mV at 1mA, 855mV at 10mA, 1000mV at 50mA, and 1200mV at 100mA. Reverse current is limited to 0.15µA at 70V and 25°C, rising to 50µA at 70V and 150°C. The reverse recovery time is 4 ns under standard test conditions. Diode capacitance is a maximum of 1.5pF at 0V and 1MHz.
This device is housed in a surface-mount SOT-23 package (TO-236-3, SC-59, SOT-23-3) and is qualified to AEC Q101 for automotive applications. It is RoHS compliant (Pb-free) and has a maximum junction temperature of 150°C. Total power dissipation is 330mW at a soldering point temperature of 28°C.
The maximum diode reverse voltage is 80V, with a peak reverse voltage of 85V.
The maximum forward current is 200mA.
The reverse recovery time (trr) is 4 ns maximum when tested at IF=10mA, IR=10mA, measured at IR=1mA, RL=100Ω.
The BAV99E6327 is offered in a surface-mount SOT-23 package, also known as TO-236-3 or SC-59.
Yes, the BAV99E6327 is AEC Q101 qualified.
The maximum forward voltage is 1.25V at 150mA forward current.
The maximum diode capacitance is 1.5pF at VR=0V and f=1MHz.