| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Forward Voltage | |
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| Reverse Recovery Time | |
| Reverse Recovery Time (trr) | |
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| Voltage |
The BAV99/8,215 is a dual high-speed switching diode array from NXP Semiconductors, configured as a series pair. It utilizes standard technology and offers fast recovery characteristics with a reverse recovery time of 4 ns. The diode has a maximum forward voltage of 1.25 V at 150 mA and a maximum reverse leakage current of 500 nA at 80 V. Designed for surface mount assembly, it is available in a TO-236-3, SC-59, or SOT-23-3 package with a supplier device package of TO-236AB. The junction operating temperature range extends up to 150°C, making it suitable for high-speed switching applications in various electronic circuits.
The maximum forward voltage is 1.25 V at 150 mA.
The reverse recovery time is 4 ns.
It is available in TO-236-3, SC-59, and SOT-23-3 surface mount packages, with supplier device package TO-236AB.
The maximum junction temperature is 150°C.
The maximum reverse leakage current is 500 nA at 80 V.
The part is listed as RoHS3 compliant, but this is unverified (low confidence).
Surface mount.