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BAV70LT3G The BAV70LT3G is a dual common cathode switching diode from ON Semiconductor. It features a 100V reverse voltage rating and 200mA forward current in a compact SOT-23 package.
Mfr Part #:

BAV70LT3G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BAV70LT3G is a dual common cathode switching diode from ON Semiconductor. It features a 100V reverse voltage rating and 200mA forward current in a compact SOT-23 package.
Total Stock: 30,770 pcs

BAV70LT3G Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
19,750 pcs
19750 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
11,020 pcs
11020 pcs On Request 1 On Request On Request On Request On Request On Request

BAV70LT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Diode Capacitance
Diode Configuration
Forward Current
Forward Voltage (Maximum @ IF = 1 mA)
Halogen Free
Mounting Type
Operating Temperature
Package / Case
Reverse Breakdown Voltage
Reverse Leakage Current (Maximum @ VR = 100 V)
Reverse Recovery Time
Reverse Recovery Time (trr)
Reverse Voltage
SVHC Present
Speed
Standard Package Quantity
Supplier Device Package
Tape and Reel
Technology
Voltage
forward_voltage (Maximum @ IF = 10 mA)
forward_voltage (Maximum @ IF = 150 mA)
forward_voltage (Maximum @ IF = 50 mA)
power_dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
power_dissipation (Maximum @ FR -5 Board, TA = 25 °C)
reverse_leakage_current (Maximum @ VR = 25 V, TJ = 150 °C)
reverse_leakage_current (Maximum @ VR = 70 V, TJ = 150 °C)
thermal_resistance_junction_to_ambient (Maximum @ Alumina Substrate)
thermal_resistance_junction_to_ambient (Maximum @ FR -5 Board)

BAV70LT3G Description

Short technical summary and product information.

The BAV70LT3G is a dual common cathode switching diode from ON Semiconductor, designed for high-speed switching applications. Each diode has a maximum reverse voltage of 100V and a forward current rating of 200mA. Forward voltage is specified at multiple test currents: 715mV at 1mA, 855mV at 10mA, 1000mV at 50mA, and 1250mV at 150mA. The device offers a fast reverse recovery time of 6ns (typical at 10mA) and low diode capacitance of 1.5pF at 0V bias, making it suitable for high-frequency signal processing.

 

Packaged in a surface-mount SOT-23 (TO-236) case, it supports an operating temperature range of -55°C to 150°C. Total power dissipation is 225mW on an FR-5 board and 300mW on an alumina substrate. The part is Pb-free, halogen-free/BFR-free, and RoHS compliant. It is supplied in tape and reel packaging with a standard quantity of 10,000 pieces per reel.

BAV70LT3G Quick Information

Product Type: Dual Switching Diode Array
Series: BAV70L
Canonical Name: BAV70LT3G Dual Switching Diode, Common Cathode
Subcategory: Rectifier Diode Array

BAV70LT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

BAV70LT3G Features

  • Dual common cathode configuration.
  • 100V maximum reverse voltage.
  • 200mA forward current rating.
  • Fast 6ns reverse recovery time.
  • Low 1.5pF diode capacitance at 0V.

BAV70LT3G Applications

  • Ideal for high-speed switching circuits.
  • Used in signal multiplexing applications.
  • Suitable for logic level shifting.
  • Applicable in portable electronics power management.

BAV70LT3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of BAV70LT3G?

100V.

What is the maximum forward current rating?

200mA.

What are the forward voltage values at different currents?

715mV at 1mA, 855mV at 10mA, 1000mV at 50mA, 1250mV at 150mA.

What is the reverse recovery time?

6ns maximum at IF=IR=10mA, RL=100Ω.

What package is the BAV70LT3G available in?

SOT-23 (TO-236) surface-mount package.

What is the operating temperature range?

-55°C to 150°C.

What is the diode capacitance?

1.5pF at VR=0V, f=1MHz.

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