| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,910 pcs
|
2910 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,734 pcs
|
1734 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,445 pcs
|
1445 pcs | On Request | 1 | On Request | On Request | 1970-01-01 00:07:32 | On Request | On Request | |
|
385 pcs
|
385 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC-Q101 | |
| Current | |
| Diode Capacitance | |
| Diode Configuration | |
| Forward Current | |
| Halogen Free | |
| Junction and Storage Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Reverse Leakage Current (Maximum @ VR = 100 V) | |
| Reverse Recovery Time | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage | |
| Speed | |
| Standard Package Quantity | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage | |
| forward_voltage (Maximum @ IF = 10 mA) | |
| forward_voltage (Maximum @ IF = 150 mA) | |
| forward_voltage (Maximum @ IF = 50 mA) | |
| forward_voltage (Maximum @ If = 1.0 mA) | |
| power_dissipation (Maximum @ Alumina Substrate, TA = 25 °C) | |
| power_dissipation (Maximum @ FR -5 Board, TA = 25 °C) | |
| reverse_leakage_current (Maximum @ VR = 25 V, TJ = 150 °C) | |
| reverse_leakage_current (Maximum @ VR = 70 V, TJ = 150 °C) | |
| thermal_resistance_junction_to_ambient (Maximum @ Alumina Substrate) | |
| thermal_resistance_junction_to_ambient (Maximum @ FR -5 Board) |
The BAV70LT1 is a dual switching diode from On Semiconductor configured as a common cathode pair in a compact SOT-23 surface mount package. Each diode is rated for a maximum reverse voltage of 100V and a forward current of 200mA, making it suitable for high-speed switching applications.
Electrical characteristics include a fast reverse recovery time of 6.0 ns (tested at IF = IR = 10mA) and low diode capacitance of 1.5 pF. Forward voltage is specified at multiple current levels: 715 mV at 1 mA, 855 mV at 10 mA, 1000 mV at 50 mA, and 1250 mV at 150 mA. Reverse leakage current is 1.0 µA at 100V and increases to 60 µA at 25V with a junction temperature of 150°C.
The device is housed in a TO-236-3 / SC-59 / SOT-23-3 package and supports surface mount assembly. It is rated for an operating temperature range of -55°C to 150°C. Power dissipation is 225 mW on an FR-5 board and 300 mW on an alumina substrate, with corresponding thermal resistances of 556°C/W and 417°C/W.
The maximum reverse voltage is 100V per diode.
The maximum forward current is 200mA per diode.
The maximum reverse recovery time is 6.0 ns (tested at IF = IR = 10mA, IR(REC) = 1.0mA).
Typical forward voltage is 715 mV at 1 mA, 855 mV at 10 mA, 1000 mV at 50 mA, and 1250 mV at 150 mA.
The BAV70LT1 is available in a SOT-23 (TO-236-3, SC-59) surface mount package.